Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations

Abstract

The electrical properties, defects and conductivity recombination mechanism of electron and ion irradiations were investigated in n-type 4H-SiC Schottky diodes. The incident particles were selected as 1 MeV electrons, 25 MeV C and 40 MeV Si ions, respectively. The defects in 4H-SiC Schottky diodes were characterized using deep level transient spectroscopy (DLTS). The primary knock-on atoms (PKAs) distribution in the irradiated 4H-SiC is calculated by SRIM code. According to the experimental results, there are significant differences between the defects produced by electrons and heavy ions. The complex peak combination can characterize the production rate of the cascades. The production rate of the cascades induced by heavy ions is much higher than that induced by electrons. Different conductivity compensation brought by different defects is the major reason for the significant difference in carrier removal rate.

Analysis of Defects and Electrical Characteristics of Variable-Temperature Proton-Irradiated 4H-SiC JBS Diodes

“…In particular, E 0.72 disappeared at the irradiation temperature of 300 K, and E 0.68 had a broad peak. The broad and asymmetrical peak may have been due to the presence of several states or defects with closely spaced emission rates, based on previous results reported in the literature [31,41]. It can be seen that the negative peak appeared in the low-temperature region, which was due to minority carrier trapping [42].…”

Role of Fermi-level depinning in quenching of V4+ related photoluminescence in semi-insulating 4H-SiC

“…The most recent research on vanadium-doped SI 4H-SiC focused on understanding how the photocurrent is affected by the optically active deep levels that are already present [22]. Investigations on radiationinduced defects in n-4H SiC have reported conductivity compensation [18,19,[23][24][25]. However, the effect of lattice defects on (i) optical properties of vanadium, and (ii) electrical properties of compensated SI 4H-SiC has not been addressed.…”

Effects of N‐Ion Implantation on the Electrical and Photoelectronic Properties of MoS2 Field Effect Transistors

“…There are varieties methods for controlling the properties of 2D materials, such as chemical functionalization, plasma treatment, charged particle irradiation, and ion implantation. [19][20][21] The most commonly method of semiconductor doping is ion implantation, but it requires accurate calculation of the range and distribution of ions. Due to the limitations of the nanometer scale in the thickness direction and energy of ion implanter, it is difficult to perform ion implantation on 2D material.…”