Irradiation Effects of Gas Cluster Ion Beams on Co–Fe Films

Toyoda, Noriaki; Fujimoto, Akihiro; Yamada, Isao

doi:10.7567/jjap.52.06gf01

Cited by 2 publications

(1 citation statement)

References 29 publications

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“…However, copper oxides with different oxidation states, such as cuprous oxide Cu One approach utilizes a gas-cluster beam under acetic acid vapor to etch Pt, Ru, Ta, CoFe, and other materials. [181][182][183][184][185] Another approach utilizes noble ion bombardment in a preadsorption step with subsequent exposure to reactants, followed by a removal step with volatile products, as shown in Fig. 10.…”

Section: Future Challengesmentioning

confidence: 99%

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Ishikawa

Karahashi

Ichikı

et al. 2017

Jpn. J. Appl. Phys.

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In this review, we discuss the progress of emerging dry processes for nanoscale fabrication. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands in achieving atomic-level control of material selectivity and physicochemical reactions involving ion bombardment. The discussion encompasses major challenges shared across the plasma science and technology community. Focus is placed on advances in the development of fabrication technologies for emerging materials, especially metallic and intermetallic compounds and multiferroic, and two-dimensional (2D) materials, as well as state-of-the-art techniques used in nanoscale semiconductor manufacturing with a brief summary of future challenges.

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Section: Future Challengesmentioning

confidence: 99%

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Ishikawa

Karahashi

Ichikı

et al. 2017

Jpn. J. Appl. Phys.

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Double-step gas cluster ion beam smoothing

武汉大学¹,

物理科学与技术学院²

2021

Acta Phys. Sin.

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In this study we use the double step gas cluster ion beam treatment to improve smoothing process of mechanically polished 4H-SiC (1000) wafers and compare it with conventional single-step smoothing. The first step is a higher energy treatment with 15 keV Ar cluster ions, and the second step is a lower 5 keV treatment. Single-step treatments are performed at 15 and 5 keV. It is shown that single-step 15 keV smoothing as compared with lower 5 keV one is very effective for removing the initial surface morphological feature (scratches), however, cluster ions impacting on the surface can create larger craters, resulting in roughness Rq of 1.05 nm. Whereas, 5 keV treatment at a selected fluence cannot remove initial scratches, which requires using higher fluences, i.e. such smoothing becomes time consuming. On the other hand, crater morphology with such a treatment is less developed, hence, the roughness slightly decreases to 0.9 nm. Using the double-step treatment, one can obtain the surface with lower Rq roughness of 0.78 nm as compared with single-step treatment, at the same total cluster ion fluence. Therefore, the double-step treatment combines the advantages of the effective smoothing of scratches at high energy and smaller crater morphology at low energy. To evaluate the contribution of the cluster morphology introduced by the accelerated clusters into the total roughness, the cluster ion beam treatment of an atomically smooth 4H-SiC (1000) surface is also carried out. It is shown that the crater diameter increases in a range of 15–30 nm with the cluster energy increasing. More detailed analysis of the smoothing process is carried out by using two-dimensional isotropic PSD function. It is shown that the cluster treatment of mechanically polished 4H-SiC wafers effectively reduces the roughness in a wavelength range of 0.05–0.20 μm and the efficiency of smoothing is higher at higher cluster energy. In a range of 0.02–0.05 μm, a roughening effect is observed, which is due to the formation of craters. This roughening effect can be effectively reduced by the subsequent lower energy step treatment, which can be shown by the PSD function analysis of the smooth SiC surface treated initially by cluster ion beam.

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Irradiation Effects of Gas Cluster Ion Beams on Co–Fe Films

Cited by 2 publications

References 29 publications

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Double-step gas cluster ion beam smoothing

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