Irradiation Effects of High-Energy Proton Beams on MoS₂Field Effect Transistors

Abstract

We investigated the effect of irradiation on molybdenum disulfide (MoS2) field effect transistors with 10 MeV high-energy proton beams. The electrical characteristics of the devices were measured before and after proton irradiation with fluence conditions of 10(12), 10(13), and 10(14) cm(-2). For a low proton beam fluence condition of 10(12) cm(-2), the electrical properties of the devices were nearly unchanged in response to proton irradiation. In contrast, for proton beam fluence conditions of 10(13) or 10(14) cm(-2), the current level and conductance of the devices significantly decreased following proton irradiation. The electrical changes originated from proton-irradiation-induced traps, including positive oxide-charge traps in the SiO2 layer and trap states at the interface between the MoS2 channel and the SiO2 layer. Our study will enhance the understanding of the influence of high-energy particles on MoS2-based nanoelectronic devices.

Effects of energetic ion irradiation on WSe2/SiC heterostructures

“…This fluence corresponds to a relatively high radiation dose in comparison to doses known to induce effects on the operation of TMD transistors. For example, trapped charges in dielectrics such as silicon dioxide can degrade the device electrical characteristics of TMD transistors at a dose level that is two to three orders of magnitude lower than used in this experiment 26 , suggesting that degradation in TMD-based device architectures is not due to the TMD layer, but surrounding materials. The XPS peak shift observed in our experiment can be interpreted as charge transfer due to a combination of direct damage to WSe 2 , indirect effects from the substrate, and carrier trapping by interface states.…”

“…We thus expect that at this total ionizing radiation dose level, a device based on this heterostructure would be damaged beyond repair due to heavy damage to the WSe 2 channel. In conclusion, due to the absence of chemical modifications of WSe 2 via XPS and the observation of charging effect only at very high proton fluence level, we expect the radiation resilience of TMD-based transistors to be limited by the dielectric insulator and the substrate, which would degrade at a much lower proton fluence level 26, 56 . The WSe 2 structural change after heavy ion bombardment indicates the impact of nuclear stopping power on these ultra-thin materials.…”

“…Due to the reduced screening of electron-electron interactions in graphene, it has been proposed that, unlike conventional metals, graphene can be damaged through electronically stimulated desorption 25 . It has also been shown that the proton irradiation of MoS 2 field effect transistors can induce trap states at interfaces and within the gate oxide, degrading the transistor’s performance 26 . Heavy ions can cause higher displacement damage than protons due to their higher atomic mass and energy transferred per collision.…”

Effects of line defects on spin-dependent electronic transport of zigzag MoS2 nanoribbons

“…13,14 In addition to the native defects unintentionally introduced during growth, defects may also be produced deliberately at the postgrowth stage. [15][16][17] There are various types of structural defects in MoS 2 , such as point defects, 13 dislocations, 18 grain boundary, 19 or topological. 20 The point defect is one of the native defects which have been studied both in experiment 13 and theory.…”

Effect of ion irradiation on nanoscale TiS2systems with suppressed Titania phase

“…Irradiation with charged particle beams allows precise control of defect generation by altering beam conditions and exposure dose [8]. Kim et al have shown the use of a high energy proton beam to introduce trap states in the back gate dielectric of a MoS2 thin-film transistor [10]. Tongay et al have used α-particle irradiation to generate vacancies in TMDCs, which give rise to new emission peaks with enhanced photoluminescence intensity [11].…”