2002
DOI: 10.1088/0268-1242/17/5/308
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Irradiation-induced degradation in solar cell: characterization of recombination centres

Abstract: Although the defects introduced by irradiation in Si and GaAs have been extensively studied, the centres giving rise to non-radiative recombination have been neither characterized nor identified. We propose here a method allowing one to fully characterize recombination centres, i.e. to obtain their electron and hole capture cross sections as well as their concentration. It is based on a correlation between data extracted from the current-voltage characteristics of a junction in dark, deep level transient spect… Show more

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Cited by 81 publications
(71 citation statements)
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“…The cell is placed in a Faraday cup allowing accurate measurement of the fluence with a current integrator. Current-voltage measurements were performed in situ in the accelerator under a 1 AM0 illumination provided by a Xe arc lamp (Bourgoin and Zazoui 2002). Defects induced by electron irradiation in n-and p-type materials have been extensively studied (for a review see Pons and Bourgoin 1985).…”
Section: Experimental Results and Principle Of Degradation Parameter mentioning
confidence: 99%
“…The cell is placed in a Faraday cup allowing accurate measurement of the fluence with a current integrator. Current-voltage measurements were performed in situ in the accelerator under a 1 AM0 illumination provided by a Xe arc lamp (Bourgoin and Zazoui 2002). Defects induced by electron irradiation in n-and p-type materials have been extensively studied (for a review see Pons and Bourgoin 1985).…”
Section: Experimental Results and Principle Of Degradation Parameter mentioning
confidence: 99%
“…where I 1 * and I 2 * are defined in [16]. Equations (4) and (5) indicates that the diffusion dark current constant has a square root dependence with particle fluence while the recombination dark current constant is linear relationship with fluence (or displacement damage dose when fluence is converted to DDD using NIEL).…”
Section: Discussionmentioning
confidence: 99%
“…The atomic displacements and vacancies produced upon irradiation in the bulk of the device also have a pronounced role in reducing the minority carrier lifetime. At low fluence, the introduction of non-radiative recombination centers would be prominent whereas at higher fluence it would be the presence of trapping centers that induce a nonnegligible compensation of free carriers [31]. In this perspective, the observed deep depletion effect in the CV plot (Fig.…”
Section: Capacitance Conductance and Tangent Loss Characteristicsmentioning
confidence: 95%