Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm

Augustin, Heiko; Berger, N.; Dittmeier, Sebastian; Hammerich, Jan Patrick; Herkert, A.; Huth, Lennart; Immig, D.; Kröger, Jens; Meier, F.; Perić, I.; Perrevoort, A.; Schöning, A.; Bruch, Dorothea Vom; Wiedner, D.

doi:10.1016/j.nima.2018.07.044

Cited by 11 publications

(7 citation statements)

References 11 publications

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“…Furthermore, the depletion depth of ≈ 30 µm allows to remove the remaining substrate and thereby thinning of the sensors to 50 µm thickness. Using commercially available processes, the MuPix chips [3][4][5][6][7] have been developed, culminating in the first large scale HVMAPS sensor.…”

Section: Introductionmentioning

confidence: 99%

MuPix10: First Results from the Final Design

Augustin

Berger

Dittmeier

et al. 2021

Proceedings of the 29th International Workshop on Vertex Detectors (VERTEX2020)

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Many years of research and development of High Voltage Monolithic Active Pixel Sensors (HVMAPS) have culminated in the final design for the Mu3e pixel sensor. MuPix10 is a fully monolithic sensor with an active pixel matrix size of 20 × 20 mm 2 produced in the 180 nm HV-CMOS process at TSI Semiconductors. The pixel size is 80 × 80 µm 2 . Hits are read out using a column-drain architecture and sent over up to four serial links with up to 1.6 Gbit s −1 each. By means of DC/DC converters and exclusive usage of on-chip biasing, MuPix10 is fully operable with a minimal set of electrical connections. This is an integral requirement by the Mu3e experiment since it enables the construction of ultra-thin pixel modules with 1 ‰ of a radiation length per layer. First results from lab characterisation and testbeam campaigns are presented.

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Section: Introductionmentioning

confidence: 99%

MuPix10: First Results from the Final Design

Augustin

Berger

Dittmeier

et al. 2021

Proceedings of the 29th International Workshop on Vertex Detectors (VERTEX2020)

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“…Even higher radiation tolerances were recently reported for sensors relying on large ll factor diodes or modied CMOS processes (see e.g. [110,111]), which are however not subject of this work.…”

Section: Integrated Displacement Damage Caused By Heavy Ionsmentioning

confidence: 81%

On the radiation tolerance of CMOS Monolithic Active Pixel Sensors with partially depleted active volume

Deveaux¹

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CMOS Monolithic Active Pixel Sensors for charged particle tracking (CPS) form are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Unlike to most other silicon radiation detectors, they rely on standard CMOS technology. This cost efficient approach allows for building particularly small and thin pixels but also introduced, until recently, substantially constraints on the design of the sensors. The most important among them is the missing compatibility with the use of PMOS transistors and depleted charge collection diodes in the pixel. Traditional CPS were thus first of all suited for vertex detectors of relativistic heavy ion and particle physics experiments, which require highest tracking accuracy in combination with moderate time resolution and radiation tolerance. This work reviews the R&D on understanding and improving the radiation tolerance of traditional CPS with non- and partially depleted active medium as pioneered by the MIMOSA-series developed by the IPHC Strasbourg. It introduces the specific measurement methods used to assess the radiation tolerance of those non-standard pixels. Moreover, it discusses the major mechanisms of radiation damage and procedures for radiation hardening, which allowed to extend the radiation tolerance of the devices by more than an order of magnitude.

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“…The radiation hardness of the AMS H18 process has been investigated in previous works [11,12] including an electrical characterisation of irradiated ATLASPix1 prototypes [13]. Single hit efficiencies for a fully monolithic HV-MAPS 1 irradiated with protons and neutrons were reported first for the MuPix7 predecessor [14] which has no radiation hard design. These performance studies have been repeated for the ATLASPix1_Simple prototype and first results were reported in [5].…”

Section: Pos(vertex2019)024mentioning

confidence: 99%

MuPix & ATLASpix: Architectures and Results

Schoening¹,

Anders²,

Augustin³

et al. 2020

Proceedings of the 28th International Workshop on Vertex Detectors — PoS(Vertex2019)

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High Voltage Monolithic Active Pixel Sensors (HV-MAPS) are based on a commercial High Voltage CMOS process and collect charge by drift inside a reversely biased diode. HV-MAPS represent a promising technology for future pixel tracking detectors. Two recent developments are presented. The MuPix has a continuous readout and is being developed for the Mu3e experiment whereas the ATLASPix is being developed for LHC applications with a triggered readout. Both variants have a fully monolithic design including state machines, clock circuitries and serial drivers. Several prototypes and design variants were characterised in the lab and in testbeam campaigns to measure efficiencies, noise, time resolution and radiation tolerance. Results from recent MuPix and ATLASPix prototypes are presented and prospects for future improvements are discussed.

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Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm

Cited by 11 publications

References 11 publications

MuPix10: First Results from the Final Design

MuPix10: First Results from the Final Design

On the radiation tolerance of CMOS Monolithic Active Pixel Sensors with partially depleted active volume

MuPix & ATLASpix: Architectures and Results

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