Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode

Abstract

In this work, we examined the irregular resistive switching behaviors of a complementary metal–oxide–semiconductor (CMOS)-compatible Cu/Al2O3/Si resistor device. X-ray photoelectron spectroscopy (XPS) analysis confirmed the chemical and material compositions of a Al2O3 thin film layer and Si substrate. Bipolar resistive switching occurred in a more stable manner than the unipolar resistive switching in the device did. Five cells were verified over 50 endurance cycles in terms of bipolar resistive switching, and a good retention was confirmed for 10,000 s in the high-resistance state (HRS) and the low-resistance state (LRS). Both high reset current (~10 mA) and low reset current (<100 μA) coexisted in the bipolar resistive switching. We investigated nonideal resistive switching behaviors such as negative-set and current overshoot, which could lead to resistive switching failure.

Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device

“…Hf 4f7/2 and Hf 4f5/2 doublet peaks were found at 18.63 eV and 20.03 eV, respectively, for Hf-O bonds in the Hf-dominated HfAlOx film. Figure 1e shows the Al 2p spectra at an etch time of 9 s. Because the Al content was low in the HfAlOx film, the Al intensity was low and some noise was observed, but a distinct peak was observed for the Al-O bond at approximately 75.4 eV [12]. Figure 2a shows the I-V current characteristics, including 200 cycles of the Pt/TiO2/HfAlOx/TiN device.…”

“…In contrast, the set and reset processes of the bipolar resistive type occur via the opposite polarity of the electric field. Among the many resistive switching materials, metal oxides are the most popular, owing to their good stability, reproducibility, and repeatability [4][5][6][7][8][9][10][11][12][13][14][15][16][17]. Representative metal oxide-based resistive random access memory (RRAM) materials include TaO x , TiO 2 , Al 2 O 3 , and HfO 2 [4][5][6][7][8][9][10][11][12][13][14][15][16][17], with different configurations like anodic oxidation and physical vapor deposition (PVD), and chemical vapor deposition (CVD).…”

“…Among the many resistive switching materials, metal oxides are the most popular, owing to their good stability, reproducibility, and repeatability [4][5][6][7][8][9][10][11][12][13][14][15][16][17]. Representative metal oxide-based resistive random access memory (RRAM) materials include TaO x , TiO 2 , Al 2 O 3 , and HfO 2 [4][5][6][7][8][9][10][11][12][13][14][15][16][17], with different configurations like anodic oxidation and physical vapor deposition (PVD), and chemical vapor deposition (CVD). It is worth noting that a bilayer stack of metal oxide exhibits relatively better resistive switching performance, such as endurance, retention, and variability performance, compared with a single-layer stack [18][19][20][21][22].…”

Improved Synaptic Device Properties of HfAlOx Dielectric on Highly Doped Silicon Substrate by Partial Reset Process

“…The reset process occurs by Joule heating and it is accompanied by high current. Representatively, unipolar resistive switching has been reported a great deal in NiO, TiO 2 , ZnO, ZrO 2 , and HfO 2 [18][19][20][21][22][23][24][25][26][27]. Although research on URS has been conducted for a long time, the poor distribution of high current, voltage, and resistance values have not been resolved.…”

Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO2-Based RRAM

“…Magnetoresistive randomaccess memory (MRAM) also shows resistance change by controlling the magnetization of magnetic material [6]. RRAM has the advantage of being capable of tunable resistive switching, which is applicable to the various application as storage memory [7][8][9][10][11][12][13][14][15][16][17][18][19][20], logicin-memory [21], and neuromorphic computing [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40]. Moreover, RRAM shows lowpower operation, high endurance, good retention, high-density integration, and good complementary metal-oxide-semiconductor (CMOS) compatibility in terms of process and material.…”