Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC

Johansson, L. I.; Xia, Changtai; Ul-Hassan, Jawad; Iakimov, Tihomir; Zakharov, Alexei; Watcharinyanon, Somsakul; Yakimova, Rositza; Janzén, Erik; Virojanadara, Charíya

doi:10.3390/cryst3010001

Cited by 10 publications

(26 citation statements)

References 23 publications

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“…Rotational disorder was observed, which was concluded from the sharp (1ˆ1) µ-LEED patterns. Additionally, only six Dirac cones centered around the K-points in the Brillouin zone appeared in the constant energy photoelectron angular distribution patterns Ei(kx,ky), recorded from grains with two, three and four graphene monolayers grown at lower temperatures (1400-1500C) [139]. High mobilities are present in the graphene layers sandwiched between the underlying and overlaying conducting layers [137].…”

Section: Growth Of Graphene On C Facementioning

confidence: 99%

“…Rotational disorder was observed, which was concluded from the sharp (1 × 1) µ-LEED patterns. Additionally, only six Dirac cones centered around the K-points in the Brillouin zone appeared in the constant energy photoelectron angular distribution patterns Ei(kx,ky), recorded from grains with two, three and four graphene monolayers grown at lower temperatures (1400-1500C) [139]. Figure 28. (a) C 1s spectra collected, using a probing area of 4 µm, from domains with different graphene thickness; (b-g) show 1.5 µm selected area LEED patterns; (b,c) the one ML domain at 45 and 145 eV; (d,e) the two ML domain at 45 and 145 eV; and (f,g) the four ML domain at 45 and 130 eV, respectively.…”

Section: Growth Of Graphene On C Facementioning

confidence: 99%

“…In (h-j) the photoelectron angular distribution pattern (PAD) collected from, respectively, the one ML, two ML and four ML domains are shown. The PADs were collected at an energy of 1.5 eV below the Fermi level, using a probing area of 800 nm [139].…”

Section: Growth Of Graphene On C Facementioning

confidence: 99%

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Epitaxial Graphene on SiC: A Review of Growth and Characterization

2016

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This review is devoted to one of the most promising two-dimensional (2D) materials, graphene. Graphene can be prepared by different methods and the one discussed here is fabricated by the thermal decomposition of SiC. The aim of the paper is to overview the fabrication aspects, growth mechanisms, and structural and electronic properties of graphene on SiC and the means of their assessment. Starting from historical aspects, it is shown that the most optimal conditions resulting in a large area of one ML graphene comprise high temperature and argon ambience, which allow better controllability and reproducibility of the graphene quality. Elemental intercalation as a means to overcome the problem of substrate influence on graphene carrier mobility has been described. The most common characterization techniques used are low-energy electron microscopy (LEEM), angle-resolved photoelectron spectroscopy (ARPES), Raman spectroscopy, atomic force microscopy (AFM) in different modes, Hall measurements, etc. The main results point to the applicability of graphene on SiC in quantum metrology, and the understanding of new physics and growth phenomena of 2D materials and devices.

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Section: Growth Of Graphene On C Facementioning

confidence: 99%

Section: Growth Of Graphene On C Facementioning

confidence: 99%

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Epitaxial Graphene on SiC: A Review of Growth and Characterization

2016

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“…So far, no one has reported C-face graphene samples to contain an ordered carbon buffer layer like on the Si-face. PES studies did not find any trace of such a carbon interface layer [41,70,71]. Only some TEM and LEEM studies have reported the presence of a disordered carbon interface layer [67][68][69].…”

Section: Graphene Grown On C-face Sicmentioning

confidence: 99%

“…Therefore, graphene grown on C-face appeared more promising for certain electronics applications if its thickness and uniformity could be controlled/improved. Also for the C-face growth in an Ar ambient, and/or in a graphite confinement, has been reported [66,70,71,75] to provide considerable improvement in the graphene quality but similar uniformity and large domain/grain sizes as on Si-face SiC has so far not been possible to accomplish.…”

Section: Graphene Grown On C-face Sicmentioning

confidence: 99%

Characterizations of as grown and functionalized epitaxial grapheneg rown on SiC surfaces

Xia¹

2015

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III AbstractThe superior electronic and mechanical properties of Graphene have promoted graphene to become one of the most promising candidates for next generation of electronic devices. Epitaxial growth of graphene by sublimation of Si from Silicon Carbide (SiC) substrates avoids the hazardous transfer process for large scale fabrication of graphene based electronic devices. Moreover, the operation conditions can potentially be extended to high temperatures, voltages and frequencies. This thesis is focused on characterizations of as grown and functionalized epitaxial graphene grown on both Si-face and C-face SiC. Synchrotron radiation-based techniques are employed for detailed investigations of the electronic properties and surface morphology of as grown and functionalized graphene.Large area and homogeneous monolayer (ML) graphene has been possible to grow on SiC(0001) substrates by sublimation, but efforts to obtain multilayer graphene of similar quality have been in vain. A study of the transport behavior of silicon atoms through carbon layers was therefore performed for the purpose to gain a better understanding of the growth mechanism of graphene on Si-face SiC. It showed that a temperature of about 800°C is required for Si intercalation into the interface to take place. Intercalation of Si was found to occur only via defects and domain boundaries which probably is the reason to the limited growth of multilayer graphene. Annealing at 1000-1100°C induced formation of SiC on the surface and after annealing above 1200°C Si started to de-intercalate and desorb/sublimate. Different alkali metals were found to affect graphene grown in SiC quite differently. Li started to intercalate already at room temperature by creating cracks and defects, while K, Rb and Cs were found unable to intercalate into the graphene/SiC interface. Effects induced by the alkali metal Na on graphene grown on both Si-face and C-face SiC were therefore studies. For the Si-face, partial intercalation of Na through graphene was observed on both 1 ML and 2 ML areas directly after Na deposition. Annealing at a temperature of about 75°C strongly promoted Na intercalation at the interface. The intercalation was confirmed to start at domain boundaries between 1 ML and 2 ML areas and at stripes/streaks on the 1 ML areas. Higher annealing temperature resulted in desorption of Na from the sample surface. Also for C-face graphene, a strong n-type doping was observed directly after Na deposition. Annealing at temperatures from around 120 to 300°C was here found to result in a considerable π-band broadening, interpreted to indicate penetration of Na in between the graphene layers and at the graphene SiC interface.The thermal stability of graphene based electronic devices can depend on the choice of contact material. Studies of the stability and effects induced by two commonly used metals (Pt and Al) on Si-face graphene were carried out after deposition and after subsequent annealing at different temperatures. Both Al and Pt were found to be g...

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Epitaxial Graphene Growth on the Step‐Structured Surface of Off‐Axis C‐Face 3C‐SiC(1¯1¯1¯)

Shi

Zakharov

Ivanov

et al. 2020

Physica Status Solidi (b)

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Graphene layers grown on the C‐face SiC exhibit quite different structural and electronic properties compared with those grown on the Si‐face SiC. Herein, the growth and structural properties of graphene on the off‐axis C‐face 3C‐SiC(1true¯1true¯1true¯) are studied. The as‐grown 4° off‐axis 3C‐SiC(1true¯1true¯1true¯) exhibits highly periodic steps with step height of ≈0.75 nm and terrace width of ≈50 nm. After annealing at 1800 °C under 850 mbar argon atmosphere, relatively uniform large graphene domains can be grown. The low‐energy electron microscopy (LEEM) results demonstrate that one monolayer (ML) to four‐ML graphene domains are grown over several micrometers square, which enables us to measure micro low‐energy electron diffraction (μ‐LEED) on the single graphene domain. The μ‐LEED pattern collected on the monolayer domain mainly exhibits four sets of graphene (1 × 1) spots, indicating the presence of graphene grains with different azimuthal orientations in the same graphene sheet. Raman spectra collected on the graphene domains show rather small D peaks, indicating the presence of less defects and higher crystalline quality of the graphene layers grown on the C‐face off‐axis 3C‐SiC(1true¯1true¯1true¯).

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Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC

Cited by 10 publications

References 23 publications

Epitaxial Graphene on SiC: A Review of Growth and Characterization

Epitaxial Graphene on SiC: A Review of Growth and Characterization

Characterizations of as grown and functionalized epitaxial grapheneg rown on SiC surfaces

Epitaxial Graphene Growth on the Step‐Structured Surface of Off‐Axis C‐Face 3C‐SiC(1¯1¯1¯)

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