Island‐Like AZO/Al₂O₃ Bilayer Channel Structure for Thin Film Transistors

Abstract

COMMUNICATION (1 of 7) Thin Film TransistorsOxide-based semiconductors, such as indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), and aluminum-doped zinc oxide (AZO), have emerged as alternative channel materials for silicon-based materials in thin-film transistors (TFTs). Significant progresses have been made in oxide-based TFTs for active-matrix display applications in an extremely short time owing to their advantageous features of high carrier mobility, superior excellent optical transparency, and long-range low

High-Stability Silver Nanowire–Al2O3 Composite Flexible Transparent Electrodes Prepared by Electrodeposition

“…From Figure 2b, a coating layer with holes can be observed on the surface of the AgNWs, and there was a sheet-like film on the surface of the layer. According to the Frenkel-Poole effect [26], the in-sulating layer below a certain size is prone to form interface defect states and forms a defect band in the forbidden band for electrons to flow, which makes Al 2 O 3 conductive [27]. The SEM images and ultraviolet (UV)-visible transmission spectra of AgNW-Al2O3 composite film are shown in Figure 2.…”

Fully Inkjet-Printed Short-Channel Metal-Oxide Thin-Film Transistors Based on Semitransparent ITO/Au Source/Drain Electrodes

“…The sheet resistance of 10 nm-thick Au film is ~12.0 Ω/square and the calculated resistivity is ~1.2 × 10 −5 Ω•cm, which is about an order of magnitude higher than that of bulk film (2.44 × 10 −6 Ω•cm). The higher resistivity of the ultrathin Au film was ascribed to the existence of nano holes, resulting from the island growth mode of the film [21,22]. The ITO/Au film with a thickness of ~40 nm exhibits a sheet resistance of ~9.8 Ω/square and the resistivity is ~3.9 × 10 −5 Ω•cm.…”

Heterojunction oxide thin film transistors: a review of recent advances

“…[1][2][3] Consequently, oxide TFTs have been applied in various devices such as display panels of active matrix liquid crystals or active matrix organic light emitting diodes, driving circuits of finger recognition sensors, X-ray sensors, chemical sensors and gas sensors. [4][5][6][7] Although several single-layered oxide TFTs with electron mobilities exceeding 10 cm 2 V À1 s À1 have recently been reported, disordered structural networks and inherent defects in oxide semiconductor materials significantly affect the electrical performance of oxide TFTs and limit their application in next-generation electronic devices. [8][9][10][11] Therefore, new approaches for developing oxide TFTs with significantly higher electron mobilities have been proposed and demonstrated.…”