Isothermal Oxidation Behavior of AlN-TiB₂ Ceramics Synthesized by SHS-HIP

Abstract

sothermal oxidation behavior of the AlN-TiB2 conductive ceramics prepared by self-propagating high-temperature synthesis and hot isostatic pressing (SHS-HIP) was evaluated in a temperature range from 900 to 1400 °C for exposure times from 1 to 16 h in air. The oxidation experimental results show that the conductive ceramics have a good oxidation resistance below 1200 °C. The oxidation products on the sample surfaces are mainly composed of Al2TiO5, TiO2 and aluminum borate phases.

More effective crack self‐healing capability of SiCf/SiC‐B4C with Al2O3 modified under wet environment

“…Early research reported the effect of Al 2 O 3 on the stability of SiO 2 -B 2 O 3 glass phase in oxidation process of AlN-SiC-TiB 2 ceramics. 15,16 It was found that the oxidation product Al 2 O 3 could limit the volatilization of B 2 O 3 in air environment, which was testified in our previous research. 17 Research by Cheng 18 showed that the content of [BO 4 ] unit would increase in Al 2 O 3 -B 2 O 3 -SiO 2 system because of the formation of Al-O-B bridging bond.…”