Isotopic mass dependence of the lattice parameter in silicon determined by measurement of strain-induced splitting of impurity bound exciton transitions

Yang, A.; Lian, H. J.; Thewalt, M. L. W.; Uemura, M.; Sagara, A.; Itoh, Kohei M.; Häller, E. E.; Ager, Joel W.; Lyon, S. A.

doi:10.1016/j.physb.2005.12.015

Cited by 6 publications

(5 citation statements)

References 8 publications

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“…9 In this Brief Report, we provide corrected values of the lattice mismatch for the 28 Si/ nat Si samples, which were subjected to a numerical error in our preliminary study. 8 We also present results for the lattice mismatch of 30 Si/ nat Si determined using PL spectroscopy, and find it to be consistent with our results for 28 Si/ nat Si.…”

Section: Introductionsupporting

confidence: 89%

“…8 This technique has, however, been previously used to measure lattice mismatches of order 10 −5 for epitaxial layers of undoped GaAs grown on doped GaAs substrates. 9 In this Brief Report, we provide corrected values of the lattice mismatch for the 28 Si/ nat Si samples, which were subjected to a numerical error in our preliminary study.…”

Section: Introductionmentioning

confidence: 99%

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High-resolution photoluminescence measurement of the isotopic-mass dependence of the lattice parameter of silicon

et al. 2008

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We have studied the dependence of the lattice parameter of silicon on isotopic mass, using high-resolution photoluminescence spectroscopy to detect splittings of the shallow donor bound exciton transitions in epitaxial layers of either isotopically enriched 28 Si or 30 Si grown on silicon substrates of natural isotopic composition. The slight lattice parameter mismatch between the isotopically enriched epitaxial layer and the natural silicon substrate induces a biaxial strain in the epitaxial layer, which results in a splitting of the hole states in the bound exciton. This can be detected with remarkable precision, especially in the highly enriched 28 Si epilayers, where the bound exciton lines are extremely sharp.

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Section: Introductionsupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

High-resolution photoluminescence measurement of the isotopic-mass dependence of the lattice parameter of silicon

et al. 2008

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“…(41)- (46). Under the large uniaxial stress along [001] the regular strain component e θ is large and much smaller random fluctuations e θ are insignificant.…”

Section: G-factor Control With Electric Fieldsmentioning

confidence: 99%

“…While this requirement is very stringent, the possibility of the growth of low-random-strain Si materials has been demonstrated in photoluminescence experiments 46 with 28 Si epilayers grown on natural silicon substrates. Yang et al 46 were able to resolve splitting of bound exciton lines due to the lattice constant mismatch a/a ∼ 10 −6 between the epilayer and the substrate. The observed exciton linewidths are at least an order of magnitude smaller than the splitting, which is indicative of the required level of the random strains ∼10 −7 .…”

Section: G-factor Control With Electric Fieldsmentioning

confidence: 99%

Large Stark effect for Li donor spins in Si

et al. 2013

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We study the effect of a static electric field on lithium donor spins in silicon. The anisotropy of the effective mass leads to the anisotropy of the quadratic Stark susceptibility, which we determined using the Dalgarno-Lewis exact summation method. The theory is asymptotically exact in the field domain below Li-donor ionization threshold, relevant to the Stark-tuning electron spin resonance experiments. To obtain the generalized Stark susceptibilities at arbitrary fields, we propose a new variational wave function, which reproduces the exact results in the low-field limit. With the calculated susceptibilities at hand, we are able to predict and analyze several important physical effects. First, we observe that the energy level shifts due to the quadratic Stark effect for Li donors in Si are equivalent to, and can be mapped onto, those produced by an external stress. Second, we demonstrate that the Stark effect anisotropy, combined with the unique valley-orbit splitting of a Li donor in Si, spin-orbit interaction, and specially tuned external stress may lead to a very strong modulation of the donor spin g factor by the electric field. Third, we investigate the influence of random strains on the g factor shifts and quantify the random strain limits and requirements to Si material purity necessary to observe the g-factor Stark shifts experimentally. Finally, we discuss possible implications of our results for quantum information processing with Li spin qubits in Si.

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“…While this requirement is very stringent, the possibility of the growth of low-random-strain Si materials has been demonstrated in photoluminescence experiments 39 with 28 Si epilayers grown on natural silicon substrates. Yang et al 39 were able to resolve splitting of bound exciton lines due to the lattice constant mismatch ∆a/a ∼ 10 −6 between the epilayer and the substrate. The observed exciton linewidths are at least an order of magnitude smaller than the splitting, which is indicative of the required level of the random strains ∼ 10 −7 .…”

Section: G-factor Control With Electric Fieldsmentioning

confidence: 99%

Large Stark Effect for Li Donor Spins in Si

Pendo,

Handberg,

Smelyanskiy

et al. 2012

Preprint

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We study the effect of a static electric field on lithium donor spins in silicon. The anisotropy of the effective mass leads to the anisotropy of the quadratic Stark susceptibility, which we determined using the Dalgarno-Lewis exact summation method. The theory is asymptotically exact in the field domain below Li-donor ionization threshold, relevant to the Stark-tuning electron spin resonance experiments. To obtain the generalized Stark susceptibilities at arbitrary fields, we propose a new variational wave function which reproduces the exact results in the low-field limit. With the calculated susceptibilities at hand, we are able to predict and analyze several important physical effects. First, we observe that the energy level shifts due to the quadratic Stark effect for Li donors in Si are equivalent to, and can be mapped onto, those produced by an external stress. Second, we demonstrate that the Stark effect anisotropy, combined with the unique valley-orbit splitting of a Li donor in Si, spin-orbit interaction and specially tuned external stress, may lead to a very strong modulation of the donor spin g-factor by the electric field. Third, we investigate the influence of random strains on the g-factor shifts and quantify the random strain limits and requirements to Si material purity necessary to observe the g-factor Stark shifts experimentally. Finally, we discuss possible implications of our results for quantum information processing with Li spin qubits in Si.

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Isotopic mass dependence of the lattice parameter in silicon determined by measurement of strain-induced splitting of impurity bound exciton transitions

Cited by 6 publications

References 8 publications

High-resolution photoluminescence measurement of the isotopic-mass dependence of the lattice parameter of silicon

High-resolution photoluminescence measurement of the isotopic-mass dependence of the lattice parameter of silicon

Large Stark effect for Li donor spins in Si

Large Stark Effect for Li Donor Spins in Si

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