Isotopically controlled semiconductors

Häller, E. E.

doi:10.1016/j.ssc.2004.12.021

Cited by 24 publications

(11 citation statements)

References 71 publications

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“…[1][2][3] An earlier study of the photoluminescence ͑PL͒ of shallow bound excitons ͑BE͒ in enriched 28 Si revealed not only the expected 3 changes of band gap energy and wavevector conserving phonon ͑WCP͒ energies with the change in average isotopic mass, but also the quite unexpected result that the linewidths of the no-phonon ͑NP͒ transitions of the P and B BEs in 28 Si were much narrower than ever seen before in the most perfect Si of natural isotopic composition. [1][2][3] An earlier study of the photoluminescence ͑PL͒ of shallow bound excitons ͑BE͒ in enriched 28 Si revealed not only the expected 3 changes of band gap energy and wavevector conserving phonon ͑WCP͒ energies with the change in average isotopic mass, but also the quite unexpected result that the linewidths of the no-phonon ͑NP͒ transitions of the P and B BEs in 28 Si were much narrower than ever seen before in the most perfect Si of natural isotopic composition.…”

Section: Introductionmentioning

confidence: 99%

Direct observation of the donor nuclear spin in a near-gap bound exciton transition: P31 in highly enriched S28i

Thewalt

Yang

Steger

et al. 2007

Journal of Applied Physics

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Observation of an electrically tunable exciton g factor in InGaAs/GaAs quantum dots Appl. Phys. Lett. 96, 053113 (2010); 10.1063/1.3309684 Indirect transitions, free and impurity-bound excitons in gallium phosphide: A revisit with modulation and photoluminescence spectroscopyWe report on ultrahigh resolution studies of the bound exciton states associated with the shallow acceptor B and the shallow donor P in highly enriched 28 Si using a tuneable single frequency laser to perform photoluminescence excitation spectroscopy. The linewidths and fine structure of the transitions, which were too narrow to be resolved previously using an available photoluminescence apparatus, are now fully revealed. The P bound exciton transition shows a complicated additional structure, which the Zeeman spectroscopy demonstrates to be a result of the splitting of the donor ground state by the hyperfine interaction between the spin of the donor electron and that of the 31 P nucleus. The 31 P nuclear spin populations can thus be determined, and hopefully modified, by optical means. The predominant Auger recombination channel of these bound excitons is used to observe the same resolved hyperfine transitions in the photocurrent spectrum. This demonstrates that donors in specific electronic and nuclear spin configurations can be selectively photoionized. Possible applications of these results to quantum computing and quantum information systems are discussed.

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Section: Introductionmentioning

confidence: 99%

Direct observation of the donor nuclear spin in a near-gap bound exciton transition: P31 in highly enriched S28i

Thewalt

Yang

Steger

et al. 2007

Journal of Applied Physics

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“…This asymmetry, coupled with the peak position, is exploited to implement an empirical approach to accurately quantify the Sn composition and lattice strain from Raman spectra.Understanding the behavior of different vibrational modes in a semiconductor is of paramount importance to probe its crystal phase and symmetry, composition, lattice strain, isotopic content, electronic and phononic properties. [1][2][3] In this regard, Raman scattering spectroscopy has thus become an ubiquitous characterisation technique as information-rich spectra are acquired from straightforward and non-destructive measurements. Therefore, it is commonly used to evaluate the chemical composition and lattice properties of, for instance, group-IV semiconductors such as strained Si, 4-6 strained Ge, 7-10 SiGe, [11][12][13][14] and GeSn layers.…”

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confidence: 99%

Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors

Bouthillier¹,

Assali²,

Nicolas³

et al. 2020

Semicond. Sci. Technol.

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We report on the behavior of Ge-Ge, Ge-Sn, Sn-Sn like and disorder-activated vibrational modes in GeSn semiconductors investigated using Raman scattering spectroscopy. By using an excitation wavelength close to E1 gap, all modes are clearly resolved and their evolution as a function of strain and Sn content is established. In order to decouple the individual contribution of content and strain, the analysis was conducted on series of pseudomorphic and relaxed epitaxial layers with a Sn content in the 5-17at.% range. All vibrational modes display qualitatively the same behavior as a function of content and strain, viz. a linear downshift as the Sn content increases or the compressive strain relaxes. Simultaneously, Ge-Sn and Ge-Ge peaks broaden, and the latter becomes increasingly asymmetric. This asymmetry, coupled with the peak position, is exploited to implement an empirical approach to accurately quantify the Sn composition and lattice strain from Raman spectra.Understanding the behavior of different vibrational modes in a semiconductor is of paramount importance to probe its crystal phase and symmetry, composition, lattice strain, isotopic content, electronic and phononic properties. [1][2][3] In this regard, Raman scattering spectroscopy has thus become an ubiquitous characterisation technique as information-rich spectra are acquired from straightforward and non-destructive measurements. Therefore, it is commonly used to evaluate the chemical composition and lattice properties of, for instance, group-IV semiconductors such as strained Si, 4-6 strained Ge, 7-10 SiGe, [11][12][13][14] and GeSn layers. [15][16][17][18][19][20][21][22][23][24][25] The latter are particularly of growing interest because of their relevance to Si-compatible light emission and detection applications in the short-and mid-wavelength infrared, [26][27][28][29][30][31][32][33][34][35] which can lead to the integration of optoelectronic and photonic circuits on complementary metal-oxide-semiconductor (CMOS) platforms. [36][37][38] Previous reports on the vibrational modes of GeSn mainly focused on Ge-Ge longitudinal optical (LO) mode as the analyses relied on the use of 488 nm 15,16 or 532 nm 18-24 excitation lines. Under these conditions, the signal-to-noise ratio is too low to clearly distinguish Sn-related vibrational modes in the vicinity of the more prominent Ge-Ge LO peak. This also applies to the study of ternary SiGeSn semiconductors. [39][40][41] When using a 633 nm excitation laser, the signal-tonoise ratio is significantly enhanced, thus allowing a clear distinction of Ge-Ge and Ge-Sn modes, in addition to other features such as disorder-activated (DA) and Sn-Sn like modes. This higher sensitivity is attributed to the increase in Raman scattering cross section when the excitation wavelength becomes close to the material's E1 gap. 39,42 Oehme et al. 25 and D'Costa et al. 17 provided a quantitative description of the evolution of peak positions as a function of the composition. However, in these studies, the investigated sampl...

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“…A wide variety of novel isotope effects have been discovered on last four decades [1][2][3][4][5][6] owing to the availability of high-quality bulk semiconductor and insulator crystals with controlled isotopic composition (see, also, reviews [7][8][9][10]). Recent high resolution spectroscopic studies of excitonic and impurity transitions in high-quality samples of isotopically enriched Si have discovered the broadening bound excitons emission (absorption) lines connected with isotopeinduced-disorder as well as the dependence of their binding energy on the isotope mass [11][12][13].…”

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confidence: 99%

Direct observation of the effect of isotope-induced disorder on the exciton binding energy in LiH_xD_1−xmixed crystals

Plekhanov¹

2007

J. Phys.: Condens. Matter

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The results of the quantitative study of the renormalization of binding energy the Wannier -Mott exciton by the isotope effect are present for the first time. For this purpose accurate measurements of the intrinsic luminescence and mirror reflection spectra of LiH x D 1−x mixed crystals with a clean surface in the temperature range 2 -100 K were carried. Nonlinear dependence of exciton binding energy E b on the isotope mass E b ∼ f(x) is caused by the bands fluctuation broadening which is connected with the isotopeinduced-disorder. Temperature dependence of exciton binding energy is briefly discussed. The extrapolation of the asymptotic linear behavior of the exciton maximum energy to T = 0 K enables to estimate the zero -point renormalization of the exciton binding energy. PACS: 32.10B; 71.20P; 78.20; 78.40F.A wide variety of novel isotope effects have been discovered on last four decades [1][2][3][4][5][6] owing to the availability of high-quality bulk semiconductor and insulator crystals with controlled isotopic composition (see, also, reviews [7-10]). Recent high resolution spectroscopic studies of excitonic and impurity transitions in high-quality samples of isotopically enriched Si have discovered the broadening bound excitons emission (absorption) lines connected with isotopeinduced-disorder as well as the dependence of their binding energy on the isotope mass [11][12][13]. The last effect was early observed on the bound excitons in diamond [14-15] and more earlier on the free excitons in LiH x D 1−x mixed crystals [16].As is well-known (see, for example [16,17,4]) the band gap energy E g in the T−→0 limit has a dependence on the average isotopic mass M due to two effects: a) the renormalization of E g by the electron-phonon interaction coupled with the dependence of the zero-point amplitudes on M (see, also [18]) and b) the dependence of the lattice constant on M , leading to a change in E g through the hydrostatic deformation potential. The electron-phonon term is dominant [19,20] and in the case of semiconductor crystals (C; Ge; Si) with a weak isotope scattering potential is varied approximately as M −1/2 . The value of the T =0 electron-phonon renormalization energy contribution to E g can be independly determined from an extrapolation of the high temperature linear dependence 1

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Isotopically controlled semiconductors

Cited by 24 publications

References 71 publications

Direct observation of the donor nuclear spin in a near-gap bound exciton transition: P31 in highly enriched S28i

Direct observation of the donor nuclear spin in a near-gap bound exciton transition: P31 in highly enriched S28i

Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors

Direct observation of the effect of isotope-induced disorder on the exciton binding energy in LiH_xD_1−xmixed crystals

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Isotopically controlled semiconductors

Cited by 24 publications

References 71 publications

Direct observation of the donor nuclear spin in a near-gap bound exciton transition: P31 in highly enriched S28i

Direct observation of the donor nuclear spin in a near-gap bound exciton transition: P31 in highly enriched S28i

Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors

Direct observation of the effect of isotope-induced disorder on the exciton binding energy in LiHxD1−xmixed crystals

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Direct observation of the effect of isotope-induced disorder on the exciton binding energy in LiH_xD_1−xmixed crystals