2011 11th IEEE International Conference on Nanotechnology 2011
DOI: 10.1109/nano.2011.6144493
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Isotropic and anisotropic scaling analysis of nanowire phase change memory

Abstract: We recently investigated the isotropic scaling properties of nanowire (NW) phase change memory (PCM) [1]. In this paper, we extend our analysis also to anisotropic scaling. By combining electrothermal theory, thermodynamic physics, and numerical simulation, the analysis explains the superiority of NW PCM over conventional thin film PCM, and reveals the different scaling properties of the three widely used operation schemes (constant electric field, constant voltage, and constant current) of NW PCM. It is demon… Show more

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Cited by 7 publications
(3 citation statements)
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“…The electron energy relaxation can be quantitatively calculated by using the quantity (6) which represents the energy carried by the electron when it is transported across the boundary between the k th principal layer and the k+1 th principal layer. It is computed that -(E 7 -E 1 )/E 1 < 4%, indicating that less than 4% of the energy carried by electrons is lost via inelastic scattering when they are transported from source to drain.…”
Section: Electron Energy Relaxationmentioning
confidence: 99%
See 1 more Smart Citation
“…The electron energy relaxation can be quantitatively calculated by using the quantity (6) which represents the energy carried by the electron when it is transported across the boundary between the k th principal layer and the k+1 th principal layer. It is computed that -(E 7 -E 1 )/E 1 < 4%, indicating that less than 4% of the energy carried by electrons is lost via inelastic scattering when they are transported from source to drain.…”
Section: Electron Energy Relaxationmentioning
confidence: 99%
“…Phase change memory technology is promising to enable next-generation ultra-dense information storage devices [1][2][3][4][5][6][7][8][9][10][11]. One of the most attractive merits of the phase change material (PCM) based device technology is its superb scalability.…”
Section: Introductionmentioning
confidence: 99%
“…Phase change memory is promising to become the next-generation mainstream memory technology [1][2][3][4][5][6][7][8][9][10][11][12]. By reversibly switching the lattice of PCM between crystalline (c-) phase and amorphous (a-) phase, information can be stored in a nonvolatile manner.…”
Section: Introductionmentioning
confidence: 99%