2011
DOI: 10.1039/c1sm05705g
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Isotropically stretchable gold conductors on elastomeric substrates

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Cited by 46 publications
(37 citation statements)
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“…Our highly stretchable nanobelts (12 belts together) could be stretched to over 130% without a notable increase in resistance (Figure 3 e). There are reports on stretchable conductors prepared by fabricating out-of-plane wavy or in-plane S-shape metal belts structures on elastomer substrates, [ 56,57,68,69 ] but none of them have reached the level of stretchability and the small change of resistance during deformation as reported here. The maximum stress appears not to be limited by the failure of the gold nanobelts, but rather to the failure of the maximum prestrain length of the substrate material.…”
Section: Communicationmentioning
confidence: 71%
“…Our highly stretchable nanobelts (12 belts together) could be stretched to over 130% without a notable increase in resistance (Figure 3 e). There are reports on stretchable conductors prepared by fabricating out-of-plane wavy or in-plane S-shape metal belts structures on elastomer substrates, [ 56,57,68,69 ] but none of them have reached the level of stretchability and the small change of resistance during deformation as reported here. The maximum stress appears not to be limited by the failure of the gold nanobelts, but rather to the failure of the maximum prestrain length of the substrate material.…”
Section: Communicationmentioning
confidence: 71%
“…14 Other researchers reported 10% change in resistance over 20% strain which is the equivalent of a 0.5 gauge factor. 21 However, the gauge factor of our wrinkled thin film wires increased sharply after 100% strain. This increase can be explained by the nucleation and elongation of fractures in the metal thin film, as expected of any thin film under high tensile strain.…”
mentioning
confidence: 79%
“…Thin fi lm gold ( ∼ 70 GPa) exhibits limited ductility and can withstand small bending strains without cracking during mechanical stress. [ 8 ] Any material chosen as source/drain (S/D) contacts must possess the correct work function, such that low ohmic contact is made with the semiconductor, indicated by a reduction in contact resistance of the device: this holds true for the Au/pentacene interface. [ 9 ] The gate dielectric is Parylene-C, chosen due to its biocompatibility, compatibility with chemical vapor deposition processing and hydrophobicity.…”
Section: Doi: 101002/adma201203976mentioning
confidence: 99%