ITO films on glass substrate by sol–gel technique: synthesis, characterization and optical properties

Effects of Organic Compounds on Microstructure, Optical, and Electrical Properties of ITO Thin Films Prepared by Dip-Coating Method

“…The spectrums show that the diffraction peaks of the ITO thin films treated without annealing are not obvious on the planes of the (400), (440), and (622) of the In 2 O 3 crystal. When the ITO films treated with annealing temperature of 400 • C, the ITO gel gradually began to lose the intermolecular water and revealed the characteristic diffraction peaks of the In 2 O 3 crystal [9,10]. All the diffraction peaks were weak even when the annealing temperature further was increased to 600 • C. In addition, no second phases corresponded to the other Sn compounds were found indicating that the Sn element was dissolved in the In 2 O 3 to form a good solid solution.…”

“…Figure 4 shows the FTIR spectra of the ITO thin films treated without annealing and with annealing at 400 • C and 600 • C in 3% H 2 /97% N 2 mixtures atmosphere. The bands appearing at below 900 cm −1 are corresponded to the stretching vibrations of In-O and Sn-O, as well as to the contributions of In=O and Sn=O bonds [9]. Moreover, there are a stretching vibration peak of C-C band in the range 1652-1579 cm −1 , a stretching vibration peak of C=O band in the range 1727-1720 cm −1 , and a stretching vibration peak of C-H band in the range 2800-2200 cm −1 since the ITO thin films were treated without annealing.…”

“…Moreover, process conditions affect the densification and crystallization of the ITO films prepared by the sol-gel technique. However, the ITO films prepared by sol-gel technique exhibit a relatively low conductivity resulting from considerable porosity even after films with postannealed at a high temperature and the difficulty to obtain metal alkoxides as raw materials for their unavailability and high price [8][9][10].…”

High temperature thermopower of sol–gel processed Zn1−x−y Al x Me y O (Me: Ga, In)

“…Since the measurement values of the turbidity range between 0 and 1000 ntu; if the turbidity value approaches to 0, it is considered that the powder precursors are dissolved very well in solutions and a homogeneous solution has been obtained; if the turbidity value approaches to 1000, it means that the powder precursors are not dissolved completely in solutions [32]. Turbidity values of the as-prepared solutions in this study were measured between 0.32 and 1.54 ntu (Table 1), which indicates that the precursors were dissolved very well in the solutions.…”

Transparent indium tin oxide as inkjet‐printed thin film electrodes for organic field‐effect transistors

“…Although several examples of sol–gel procedures were suggested for the manufacturing of ITO, the resulting films are still lacking with respect to uniformity and surface roughness 10–12. Recently, modifications were suggested, which overcome this problem by starting with relatively porous films and repeating the infiltration process several times to achieve dense films 8, 13.…”