ITO‐induced Columnar Polycrystalline Silicon Thin Films by CVD

Abstract

CVD is used to prepare indium tin oxide (ITO)-induced polycrystalline silicon thin films with SiH 4 as the precursor. The growth of columnar polycrystalline silicon is shown. The sheet resistance (R & ) of ITO-induced Si thin films ranges from about 167.3 to 466.2 V/sq. Light absorption increases, as does the detected transmittance, by about 18.4% À 30.5% for wavelengths less than 500 À 700 nm.