ITO substrate resistivity effect on the properties of CuInSe2 deposited using two-electrode system

Bouraiou, A.; Aida, M.S.; Tomasella, Éric; Attaf, N.

doi:10.1007/s10853-009-3252-y

Cited by 18 publications

(8 citation statements)

References 25 publications

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“…These last peaks correspond to the most intense peaks given in the JCPDS card (File N • : 40-1487) for CuInSe 2 , they are corresponding respectively to the (101), (112), (103), (204)/(220), (116)/(312) and (424) planes [21]. On the other hand, the calculation of the preferential orientation degree in the films [6,22] shows the high degree of preferred orientation towards the <112> direction and the film annealed during 45 min presents the higher intensity ratio. This confirmed that all annealed films present a chalcopyrite phase of CuInSe 2 with a tetragonal structure and with <112> as preferred orientation.…”

Section: Resultsmentioning

confidence: 99%

“…The instrumentation and the deposition method were the same as described in a previous work [6]. The ITO coated glass substrate is used as the working electrode (cathode).…”

Section: Methodsmentioning

confidence: 99%

“…The efficiency of solar cells based on CuInSe 2 films is critically influenced by several parameters such as the elaboration technique, the experimental parameters, the preferred orientation of CuInSe 2 growth layer and substrate properties [6], etc.…”

Section: Introductionmentioning

confidence: 99%

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Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system

Bouraiou¹,

Aida²,

Mosbah³

et al. 2009

Braz. J. Phys.

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In this paper, we report the effect of annealing time on the properties of copper indium diselenide CuInSe 2 films. The CuInSe 2 thin films have been grown at room temperature by electrochemical deposition technique using two electrodes system. The as deposited films were annealed under argon atmosphere at 300 o C during 15, 30, 45 and 60 min. The structural and morphological properties of the resulting films were characterized respectively by means of x-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical band gap was estimated from transmittance measurements. We have found, that after annealing, all films present CuInSe 2 in its chalcopyrite structure and with preferred orientation along <112> direction. The film annealed during 45 min exhibits better crystallinity and excellent optical properties. The SEM pictures show that the elaborated films have a uniform surface morphology with a homogeneity distribution of crystallites, the grain became higher in size with prolongation of annealing time; it lays in the range of 195 to 515Å.

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Section: Resultsmentioning

confidence: 99%

“…The instrumentation and the deposition method were the same as described in a previous work [6]. The ITO coated glass substrate is used as the working electrode (cathode).…”

Section: Methodsmentioning

confidence: 99%

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Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system

Bouraiou¹,

Aida²,

Mosbah³

et al. 2009

Braz. J. Phys.

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“…For this reason, in this work, simplified 2-electrode system is used instead of conventional 3-electrode system. There are various reports on the electrodeposition of thin film semiconductors using 2-electrode system which shows the reliability and applicability of this technique for fabrication of high quality thin film solar cells [17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Electrodeposition of CdTe thin films using nitrate precursor for applications in solar cells

Salim

Patel

Abbas

et al. 2015

J Mater Sci: Mater Electron

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“…It is found that the intensity ratio, R I , is ranged between 0.6 and 0.7; this shows the high degree of preferred orientation towards (112) direction for all deposited films. The obtained values are in the same range than that for CuInSe 2 reported elsewhere [16]. The lattice constants (a and c), the dislocation density δ and the strain є in the films were calculated using the same scheme as described in ref.…”

Section: Resultsmentioning

confidence: 73%

Electrodeposition and Characterization of Cu(In, Al)Se<sub>2</sub> for Applications in Thin Film Tandem Solar Cells

Meglali¹,

Attaf²,

Bouraiou³

et al. 2013

MSA

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Cu(In, Al)Se 2 thin films were prepared by electrodeposition from the aqueous solution consisting of CuCl 2 , InCl 3 , AlCl 3 and SeO 2 onto ITO coated glass substrates. The as-deposited films were annealed under vacuum for 30 min at temperature ranging between 200˚C and 400˚C. The structural, composition, morphology, optical band gap and electrical resistivity of elaborated thin films were studied, respectively using x-ray diffraction, energy dispersive analysis of x-ray, scanning electron microscopy, UV spectrophotometer and four-point probe method. The lattice constant and structural parameters viz. crystallite size, dislocation density and strain of the films were also calculated. After vacuum annealing, x-ray diffraction results revealed that all films were polycrystalline in nature and exhibit chalcopyrite structure with (112) as preferred orientation. The film annealed at 350˚C showed the coexistence of CIASe and InSe phases. The average crystallite size increases linearly with annealing temperature, reaching a maximum value for 350˚C. The films show a direct allowed band gap which increases from 1.59 to 1.78 eV with annealing temperature. We have also found that the electrical resistivity of films is controlled by the carrier concentration rather than by their mobility.

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ITO substrate resistivity effect on the properties of CuInSe2 deposited using two-electrode system

Cited by 18 publications

References 25 publications

Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system

Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system

Electrodeposition of CdTe thin films using nitrate precursor for applications in solar cells

Electrodeposition and Characterization of Cu(In, Al)Se<sub>2</sub> for Applications in Thin Film Tandem Solar Cells

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ITO substrate resistivity effect on the properties of CuInSe2 deposited using two-electrode system

Cited by 18 publications

References 25 publications

Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system

Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system

Electrodeposition of CdTe thin films using nitrate precursor for applications in solar cells

Electrodeposition and Characterization of Cu(In, Al)Se&lt;sub&gt;2&lt;/sub&gt; for Applications in Thin Film Tandem Solar Cells

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Electrodeposition and Characterization of Cu(In, Al)Se<sub>2</sub> for Applications in Thin Film Tandem Solar Cells