IV–VI Semiconductors for Mid-infrared Optoelectronic Devices

McCann, Patrick J.

doi:10.1007/1-84628-209-8_7

Cited by 15 publications

(9 citation statements)

References 53 publications

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“…The energy gaps of these alloys increase very rapidly with Sr or Ca content, with only moderate changes in the lattice constants. This makes these alloys equally well suited for the fabrication of lead-salt-based quantum well structures and MIR lasers (6,7,43,48). For alloys with other alkaline earth chalcogenides such as BaTe or MgTe, only a rather small solubility region exists due to the significantly larger difference in lattice parameters.…”

Section: Band Gap Engineeringmentioning

confidence: 99%

“…Infrared IV-VI diode lasers provide a high performance (3,4,6,7,43,48) and thus, have been produced on a commercial basis. The main material properties that are advantageous in this respect are (i) the electronic band structure, with mirror-like bands at the L-points of the Brillouin zone and the high joint density of states (57), (ii) the lower nonradiative Auger recombination rate in IV-VI compounds as compared to narrow gap III-V and II-VI materials (58), and (iii) the high refractive index that allows efficient optical confinement of the laser mode (48).…”

Section: Diode Lasersmentioning

confidence: 99%

“…The main applications for mid-infrared IV-VI lasers are tracegas-sensing systems based on laser absorption spectroscopy employed, e.g., for pollution monitoring, factory process control, toxic-gas detection, human breath analysis for medical diagnostics, etc. (3,4,(7)(8)(9). The key absorption lines for several important atmospheric species are shown in Figure 11 together with the wavelength coverage of lead salt lasers.…”

Section: Diode Lasersmentioning

confidence: 99%

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Semiconductors,IV–VI

Springholz

Bauer

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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The IV–VI compounds formed from elements of columns IV (Ge, Sn, and Pb) and VI (S, Se, and Te) of the periodic table of elements are among the oldest known semiconducting materials. The most prominent representatives, PbS, PbSe, and PbTe, have been used for more than 100 years for electronic and optoelectronic device applications. The IV‐VI materials are narrow gap semiconductors which exhibit quite different structural, electronic, and optical properties as compared to other semiconductors. This arises from the ten valence electrons per atomic pair in the IV‐VI compounds instead of the eight valence electrons typical for the tetrahedrally bonded group IV, III–V, and II–VI semiconductors. This article overviews fundamental aspects of IV‐VI semiconductors, including their structural, optical and electronic properties, as well as practical aspects such as single crystal growth and band gap engineering. In addition, important applications such as infrared detectors, microdisk lasers, and thermoelectric devices are also discussed.

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Section: Band Gap Engineeringmentioning

confidence: 99%

Section: Diode Lasersmentioning

confidence: 99%

Section: Diode Lasersmentioning

confidence: 99%

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Semiconductors,IV–VI

Springholz

Bauer

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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“…The IV-VI semiconductors consist of binary compounds PbS, PbSe, and PbTe and their alloys i.e., PbSnSe, PbSnTe, PbSrSe, PbEuTe etc. [4]. They are used in diode lasers [5], long wavelength imaging [6], and in also thermo photovoltaic devices [7].…”

Section: Introductionmentioning

confidence: 99%

Principle Investigation of Structural, Electronics and Chemical Properties of Sn Doped PbX (X=S, Se, Te)

M¹,

Shah²,

Khan³

et al. 2017

J Theor Comput Sci

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“…Particularly, NWs made of IV-VI materials, and especially of PbTe, are perspective for thermoelectrics [2,3], infra-red lasers and detectors [4,5] as well as for multi-exciton generation in enhanced surface area solar cells [6,7].…”

Section: Introductionmentioning

confidence: 99%