Jan Vanhellemont – 35 years of materials research in microelectronics

Abstract

On the occasion of the decease of Prof. Jan Vanhellemont, a brief overview of his scientific career, covering more than 35 years in semiconductor materials science, is given in this paper. The main scientific highlights are summarized. Besides the different positions he has taken in his career at different universities and companies, he has also been very active in establishing a world‐wide network of collaborations and contacts, who often became also good friends. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

High-Throughput Screening of Extrinsic Point Defect Properties in Si and Ge: Database and Applications

“…In this article we apply high-throughput screening to impurities in Si and Ge. While Si has been the focus of the semiconductor industry for the last 50 years, Ge has recently regained interest as a high-mobility substrate and is still commonly used in niche markets such as radiation detectors and space solar cells. − Impurities are essential to both materials, providing control over the semiconductor’s properties during production and device operation. Knowledge of impurity properties in Ge is significantly less complete than for Si, and even for the latter only a subset of the periodic table has been studied. ,− Through high-throughput screening this knowledge can be considerably extended beyond what is currently experimentally known.…”

“…His enthusiasm and vast semiconductor knowledge will be missed. An overview of his career can be found in ref .…”