“…19,20 In particular, MoSSe and WSSe Janus monolayers have been prepared successfully, 21,22 which further motivates theoretical research on M 2 XY (M = Ga, In; X, Y = S, Se, Te) Janus monolayers. 23–27 The M 2 XY Janus monolayers were previously reported to be semiconducting materials that possess wide bandgaps of 2.03 to 0.89 eV 24 and were thought to be useful for application in optoelectronics. Also, the M 2 STe and M 2 SeTe (M = Ga, In) Janus monolayers are proven to have a direct-gap nature.…”