Janus monolayer of WSeTe, a new structural phase transition material driven by electrostatic gating

Abstract

By density functional theory calculations, we show that the Janus monolayer of WSeTe has faster semiconductor–semimetal phase transition kinetics than MoTe2.

Direct synthesis of metastable phases of 2D transition metal dichalcogenides

“…120 The required gate voltages could be substantially reduced by varying the chemical composition, such as by alloying 119,121 or forming Janus monolayers. 122…”

Tunable Rashba spin splitting in Janus transition-metal dichalcogenide monolayersviacharge doping

“…In this work, we demonstrate a new and effective way to tune the Rashba effect in 2D Janus TMDs, that is, charge doping, which can be realized by the gate voltage of FETs in experiments. 25 In particular, we nd that electron doping can effectively strengthen the Rashba spin splitting in 2D Janus TMDs without constant energy consumption, which is better than traditional experimental techniques (electric elds and strain engineering). By combining the DFT calculations with the electric-triple-layer model, we also reveal the intrinsic mechanism of tuning the Rashba effect in 2D Janus TMDs by charge doping, and nd that charge transfer plays an important role in manipulating the Rashba spin splitting in 2D polar semiconductors.…”

MoS2and Janus (MoSSe) based 2D van der Waals heterostructures: emerging direct Z-scheme photocatalysts

“…In this scenario, theoretical studies of the TMOs have showcased a huge potential, which helps in opening the scope of further research 17,18 . Another class of 2D materials that have recently drawn a lot of interest is Janus 19,20 . These materials, having the form of MXY (M = Mo and X,Y = O, S, Se and Te; X =Y), lack mirror symmetry and have vertical dipole 21,22 .…”