2022
DOI: 10.1016/j.jpcs.2021.110459
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Janus ZnS nanoparticles: Synthesis and photocatalytic properties

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Cited by 9 publications
(3 citation statements)
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“…ZnS is a wide band gap semiconductor, with band gap energy in the range 3.25–3.74 eV [ 24 , 44 ] for cubic and 3.52–3.64 [ 28 , 45 ] for hexagonal structure, and with high optical transmittances in the Vis region and large exciton binding energy (40 meV) [ 46 ]. The band gap energy (E g ) reported for ZnS covers a wide range of values, from 2.5 eV [ 47 ] to 4.64 eV [ 48 ], most with Eg = 3.21–3.71 eV, as is shown in Figure 1 .…”
Section: Zns Nanostructures Photocatalysts For Organic Pollutants Deg...mentioning
confidence: 99%
See 1 more Smart Citation
“…ZnS is a wide band gap semiconductor, with band gap energy in the range 3.25–3.74 eV [ 24 , 44 ] for cubic and 3.52–3.64 [ 28 , 45 ] for hexagonal structure, and with high optical transmittances in the Vis region and large exciton binding energy (40 meV) [ 46 ]. The band gap energy (E g ) reported for ZnS covers a wide range of values, from 2.5 eV [ 47 ] to 4.64 eV [ 48 ], most with Eg = 3.21–3.71 eV, as is shown in Figure 1 .…”
Section: Zns Nanostructures Photocatalysts For Organic Pollutants Deg...mentioning
confidence: 99%
“…These drawbacks somewhat limit the practical applications of ZnS as a photocatalyst. To overcome these impediments, various strategies have been used to improve the photocatalytic performance of ZnS NSs by adjusting band gap energy (to absorb Vis light), such as morphology engineering [ 23 , 24 ], metal/non-metal doping [ 3 , 9 , 25 , 26 ], defect engineering [ 26 , 27 , 28 , 29 ], dye sensitization [ 18 ], and heterostructures construction [ 30 , 31 , 32 , 33 , 34 , 35 , 36 ]. However, nanostructured ZnS materials have versatile potential applications in optoelectronic devices (e.g., flat-panel displays, injection lasers, UV light-emitting diodes, electroluminescent sensors, and infrared windows [ 5 , 37 , 38 ]) and as photocatalysts in the following processes: (a) green synthesis of organic compounds (e.g., substituted tetrazoles and xanthene and its derivatives [ 5 ]), (b) syngas production in water [ 39 ], (c) CO 2 photoreduction [ 40 ], and (d) H 2 production via water splitting [ 27 , 41 , 42 , 43 ].…”
Section: Introductionmentioning
confidence: 99%
“…Among many photocatalysts, ZnIn 2 S 4 , as a ternary metalsulfur compound semiconductor catalyst with a typical layer structure, has a narrower band gap compared with traditional oxide photocatalysts such as TiO 2 , [2][3] ZnO, [4][5][6][7] ZrO 2 , [8][9][10][11] etc. Compared with binary metal-sulfur semiconductor photocatalysts such as CdS, [12][13][14] CuS, [15][16][17][18][19] and ZnS, [20][21][22][23] ZnIn 2 S 4 is greener in the photocatalytic reaction process without generating toxic ions and more straightforward to prepare compared with other ternary metal-sulfur compounds such as ZnCdS, [24][25][26][27] Zn 3 In 2 S 6 , [28][29][30][31] etc., while attracting the attention of many related workers by its unique photoelectric properties and catalytic characteristics. ZnIn 2 S 4 is an n-type semiconductor with three different crystal morphologies, including cubic phase, hexagonal phase, and rhombic phase, [32] among which the two crystalline forms of cubic phase and hexagonal phase are more common in photocatalytic experiments.…”
Section: Introductionmentioning
confidence: 99%