Joint Research on Scatterometry and AFM Wafer Metrology

Bodermann, Bernd; Buhr, E.; Danzebrink, Hans‐Ulrich; Bär, Markus; Scholze, Frank; Krumrey, Michael; Wurm, Matthias; Klapetek, Petr; Hansen, Paul Robert; Korpelainen, Virpi; Veghel, Marijn van; Yacoot, Andrew; Siitonen, Samuli; Gawhary, Omar El; Burger, Sven; Saastamoinen, Toni; Seiler, David G.; Diebold, Alain C.; McDonald, Robert; Chabli, Amal; Secula, Erik M.

doi:10.1063/1.3657910

Cited by 4 publications

(3 citation statements)

References 12 publications

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“…In this field JCMsuite is mainly used in projects regarding optical metrology of nanostructures of interest to the semiconductor industry. 94,[97][98][99][100][101][102][103][104][105][106][107][108] The FEM implementation is also used by national metrology institutes (PTB, NIST) for critical dimension metrology and other purposes. 99,101,105,109…”

Section: Optical Metrologymentioning

confidence: 99%

Advanced finite-element methods for design and analysis of nanooptical structures: applications

et al. 2013

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Section: Optical Metrologymentioning

confidence: 99%

Advanced finite-element methods for design and analysis of nanooptical structures: applications

et al. 2013

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“…22 All these methods measure the change of electromagnetic radiation during reflection from or transmission through the investigated sample. The advantage of ellipsometry over reflectometry is that the input intensity does not have to be known, and the sensitivity is higher due to the capability of measuring the phase change between reflections polarized parallel and perpendicular to the plane of incidence.…”

Section: Optical Methodsmentioning

confidence: 99%

Methods for optical modeling and cross-checking in ellipsometry and scatterometry

et al. 2015

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Indirect optical methods like ellipsometry or scatterometry require an optical model to calculate the response of the system, and to fit the parameters in order to minimize the difference between the calculated and measured values. The most common problem of optical modeling is that the measured structures and materials turn out to be more complex in reality than the simplified optical models used as first attempts to fit the measurement. The complexity of the optical models can be increased by introducing additional parameters, if they (1) are physically relevant, (2) improve the fit quality, (3) don't correlate with other parameters. The sensitivity of the parameters can be determined by mathematical analysis, but the accuracy has to be validated by reference methods. In this work some modeling and verification aspects of ellipsometry and optical scatterometry will be discussed and shown for a range of materials (semiconductors, dielectrics, composite materials), structures (damage and porosity profiles, gratings and other photonic structures, surface roughness) and cross-checking methods (atomic force microscopy, electron microscopy, x-ray diffraction, ion beam analysis). The high-sensitivity, high-throughput, in situ or in line capabilities of the optical methods will be demonstrated by different applications.

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“…Optical scatterometry is used in numerous configurations [1]- [4] from monochromatic to spectroscopic, from reflectometric to polarimetric, from specular to angle resolved, from coherent to incoherent. In Fourier scatterometry, a focused spot is created by a high numerical aperture (NA) microscope objective (MO), and the scattered illumination is collected by the same MO [5].…”

Section: Introductionmentioning

confidence: 99%

Fourier ellipsometry – an ellipsometric approach to Fourier scatterometry

Petrik

Kumar

Fried

et al. 2015

J. Eur. Opt. Soc.-Rapid Publ.

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An extension of Fourier scatterometry is presented, aiming at increasing the sensitivity by measuring the phase difference between the reflections polarized parallel and perpendicular to the plane of incidence. The ellipsometric approach requires no additional hardware elements compared with conventional Fourier scatterometry. Furthermore, incoherent illumination is also sufficient, which enables spectroscopy using standard low-cost light sources.

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Joint Research on Scatterometry and AFM Wafer Metrology

Cited by 4 publications

References 12 publications

Advanced finite-element methods for design and analysis of nanooptical structures: applications

Advanced finite-element methods for design and analysis of nanooptical structures: applications

Methods for optical modeling and cross-checking in ellipsometry and scatterometry

Fourier ellipsometry – an ellipsometric approach to Fourier scatterometry

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