Junction Control by Carbon and Phosphorus Co-Implantation in Pre-Amorphized Germanium

Liu, J. B.; Luo, Jun; Simoen, Eddy; Niu, Yingxi; Yang, Fei; Wang, G. L.; Wang, W. W.; Chen, D. P.; Li, J. F.; Zhao, Chao; Ye, T. C.

doi:10.1149/2.0091606jss

Cited by 8 publications

(5 citation statements)

References 34 publications

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“…2a), the optimum C I/I condition (8 keV case in Fig. 2b) corresponds with the presence of a sufficient carbon concentration below the a/c interface, while at the same time, the ECS Transactions, 75 (4) 219-226 (2016) associated damage should be small enough, i.e., the concentration of carbon I/I-induced vacancies below the a/c interface in c-Ge should not overwhelm previous Ge PAI damage [10]. In this way, one assures that there are sufficient C atoms beyond the a/c interface to trap fast diffusing PV pairs.…”

Section: Resultsmentioning

confidence: 99%

“…Thanks to its intrinsic high mobilities for carriers, i.e., 3900 and 1900 cm 2 V -1 s -1 for holes and electrons respectively, Ge has resurged as an alternative channel material for metaloxide-semiconductor field-effect transistors (MOSFETs) [1][2][3][4]. To realize state-of-the-art high-performance Ge devices, the formation of highly activated shallow junctions, especially, n-type junctions as well as the large specific contact resistivity (c), are still great challenges remaining to be resolved, in spite of numerous efforts spent in the past decade [5][6][7][8][9][10][11][12].…”

Section: Introcutionmentioning

confidence: 99%

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(Invited) On the Manipulation of Phosphorus Diffusion as Well as the Reduction of Specific Contact Resistivity in Ge by Carbon Co-Doping

Luo¹,

Liu²,

Simoen³

et al. 2016

ECS Trans.

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In this work, the manipulation of phosphorus diffusion as well as the reduction of the specific contact resistivity in Ge by carbon co-doping is explored. It is found that there is an optimum condition for carbon implantation to suppress the rapid P diffusion effectively. For such a condition, the implanted carbon sits at the half range of the pre-amorphized Ge layer. In this case, both the diffusion of P in the amorphous layer and in the Ge virtual substrate beyond the amorphous/crystal (a/c) interface can be effectively manipulated. Except the control of P diffusion, the specific contact resistivity (ρc) between as-formed NiGe and the Ge substrate in the presence of C can be also reduced, compared with the reference without C. At 500°C germanidation temperature,the ρc values are reduced from 1.1x10-4 Ω-cm2 and 2.9x10-5 Ω-cm2 for NiGe/n- and p-Ge contacts without carbon to 7.3x10-5 Ω-cm2 and 1.4x10-5 Ω-cm2 for their counterparts with carbon, respectively.

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Section: Resultsmentioning

confidence: 99%

Section: Introcutionmentioning

confidence: 99%

(Invited) On the Manipulation of Phosphorus Diffusion as Well as the Reduction of Specific Contact Resistivity in Ge by Carbon Co-Doping

Luo¹,

Liu²,

Simoen³

et al. 2016

ECS Trans.

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“…Some novel solutions e.g., co-implantation, cryogenic implantation or Cluster implant were developed to reduce the dopant's diffusion in the substrate during activation step [102][103][104][105][106]. For co-implantation, carbon was proved to be an appropriate species with good control of dopant diffusion in both silicon or germanium based transistors [107,108].…”

Section: Dopant Implantation In Cmosmentioning

confidence: 99%

The Challenges of Advanced CMOS Process from 2D to 3D

Radamson

Zhang

et al. 2017

Applied Sciences

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Abstract:The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades. The driving force for such scientific and technological development is to reduce the production price, power consumption and faster carrier transport in the transistor channel. Therefore, many challenges and difficulties have been merged in the processing of transistors which have to be dealed and solved. This article highlights the transition from 2D planar MOSFETs to 3D fin field effective transistors (FinFETs) and then presents how the process flow faces different technological challenges. The discussions contain nano-scaled patterning and process issues related to gate and (source/drain) S/D formation as well as integration of III-V materials for high carrier mobility in channel for future FinFETs.

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“…Moreover, it is well known that fluorine also plays a very important role in forming the ultra-shallow junction in n-type Ge MOSFETs, since it can prevent the rapid diffusion of phosphorous by forming PV − clusters. [17][18][19][20][21] As a result, it is of immense importance to explore the effects of fluorine implantation on both the formation of NiGe films and n-Ge shallow junctions. One may argue that what is the novelty of present work since fluorine has been adopted in Ref.…”

Section: Introductionmentioning

confidence: 99%

Enhancing the thermal stability of NiGe by prior-germanidation fluorine implantation into Ge substrate

Duan

Wang

et al. 2018

Jpn. J. Appl. Phys.

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Thanks to its low resistivity (22 µΩ cm), low formation temperature (300-500 °C) and low Ge consumption, NiGe is deemed as a promising candidate as source/drain contact material. However, the agglomeration of NiGe films at high temperature hinders their extensive applications in Ge-based devices. In this work, prior-germanidation fluorine implantation is employed to improve the thermal stability of NiGe films, as well as to form a shallow n-Ge junction simultaneously. As-formed NiGe films with and without fluorine were characterized by means of sheet resistance measurement, X-ray diffraction (XRD), scanning electron microscopy (SEM), and secondary ion mass spectrometry (SIMS). It is found that compared to NiGe films without fluorine, the thermal stability of NiGe films with fluorine can be improved by approximately 50 °C. Moreover, the junction depth of n-Ge with fluorine is approximately 8 nm shallower than that without fluorine. The aggregation of fluorine atoms at NiGe grain boundaries and at the NiGe/Ge interface is thought to be responsible for enhanced thermal stability, as well as the increase in sheet resistance of as-formed NiGe films.

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Junction Control by Carbon and Phosphorus Co-Implantation in Pre-Amorphized Germanium

Cited by 8 publications

References 34 publications

(Invited) On the Manipulation of Phosphorus Diffusion as Well as the Reduction of Specific Contact Resistivity in Ge by Carbon Co-Doping

(Invited) On the Manipulation of Phosphorus Diffusion as Well as the Reduction of Specific Contact Resistivity in Ge by Carbon Co-Doping

The Challenges of Advanced CMOS Process from 2D to 3D

Enhancing the thermal stability of NiGe by prior-germanidation fluorine implantation into Ge substrate

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