Junction Properties and Applications of ZnO Single Nanowire Based Schottky Diode

Das, Sachindranath; Kar, Jyoti Prakash; Jae-Min, Myoung

doi:10.5772/16344

Cited by 4 publications

(2 citation statements)

References 39 publications

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“…On the contrary, the top Au electrode provides the junction for the drain electrode and creates a Schottky barrier at the surface of the ZnO NW (shown as the embedded barrier in Figure b) . This type of asymmetric structure provides an effective way to suppress dark current and improve the collection of photocarriers. − The cross-sectional view of the VRPET is illustrated in Figure c. The VRPET consists of an intrinsic ZnO NW with a surface functionalized layer, a dielectric layer and an OLED on a silicon dioxide (SiO 2 ) substrate.…”

Section: Resultsmentioning

confidence: 99%

High Performance Vertical Resonant Photo-Effect-Transistor with an All-Around OLED-Gate for Ultra-Electromagnetic Stability

Asare‐Yeboah

et al. 2019

ACS Nano

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The utilization of three-dimensional (3D) structures in next-generation nanodevices has been attractive due to the exceptional features they offer. These 3D structures can reduce component space and improve device properties compared to thin-film electronic components. The type of transistor applied in 3D nanodevices is one of the most widely studied components due to its rich physics and ubiquitous application. In this paper, we report a complete functionalized component, a 3D vertical resonant photo-effect-transistor (VRPET), which is realized with the functionalized nanowire current channel, asymmetric ohmic/Schottky contacts, and an ultraviolet photogate with an organic light emission diode (OLED) excitation. To enhance the VRPET performance, analyses of the design and fabrication parameters were carried out, where the focus was specifically on the relationship between light resonance and absorption. The transistor developed here can operate up to a high voltage of 16.5 V and control currents up to 50 μA with an ultrastable performance under a strong electromagnetic interference. The VRPET with excellent properties is a step toward achieving integrated photoelectric devices and corresponding applications.

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Section: Resultsmentioning

confidence: 99%

High Performance Vertical Resonant Photo-Effect-Transistor with an All-Around OLED-Gate for Ultra-Electromagnetic Stability

Asare‐Yeboah

et al. 2019

ACS Nano

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“…The potential barrier is then reduced and charge transfer across the junction area is enhanced after ns laser irradiation. A previous study has shown that such variations in the height of the potential barrier can be inferred from the current amplitude in the low bias regime [81]. The inset in figure 5(a) shows that the current at low bias increases after ns laser irradiation, indicating that the potential barrier height has been lowered and the carrier concentration in CuO has increased after laser processing.…”

Section: Resultsmentioning

confidence: 79%

Laser modification of Au–CuO–Au structures for improved electrical and electro-optical properties

et al. 2022

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CuO nanomaterials are one of the metal-oxides that received extensive investigations in recent years due to their versatility for applications in high-performance nano-devices. Tailoring the device performance through the engineering of properties in the CuO nanomaterials thus attracted lots of effort. In this paper, we show that nanosecond (ns) laser irradiation is effective in improving the electrical and opto-electrical properties in the copper oxide nanowires (CuO NWs). We find that ns laser irradiation can achieve joining between CuO NWs and interdigital gold electrodes. Meanwhile, the concentration and type of interband defects in CuO can be controlled by ns laser irradiation as well. An increase in the concentration of defect centers, together with a reduction in the potential energy barrier at the Au/CuO interfaces due to laser irradiation increases electrical conductivity and enhances photo-conductivity. We demonstrate that the enhanced electrical and photo-conductivity achieved through ns laser irradiation can be beneficial for applications such as resistive switching and photo-detection.

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Electrolyte‐Gated Vertical Transistor Charge Transport Enables Photo‐Switching

Vieira,

Nogueira,

Merces

et al. 2024

Adv Elect Materials

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Proposals for new architectures that shorten the length of the transistor channel without the need for high‐end techniques are the focus of very recent breakthrough research. Although vertical and electrolyte‐gate transistors are previously developed separately, recent advances have introduced electrolytes into vertical transistors, resulting in electrolyte‐gated vertical field‐effect transistors (EGVFETs), which feature lower power consumption and higher capacitance. Here, EGVFETs are employed to study the charge transport mechanism of spray‐pyrolyzed zinc oxide (ZnO) films to develop a new photosensitive switch concept. The EGVFET's diode cell revealed a current‐voltage relationship arising from space‐charge‐limited current (SCLC), whereas its capacitor cell provided the field‐effect role in charge accumulation in the device's source perforations. The findings elucidate how the field effect causes a continuous shift in SCLC regimes, impacting the switching dynamics of the transistor. It is found ultraviolet light may mimic the field effect, i.e., a pioneering demonstration of current switching as a function of irradiance in an EGVFET. The research provides valuable insights into the charge transport characterization of spray‐pyrolyzed ZnO‐based transistors, paving the way for future nano‐ and optoelectronic applications.

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Junction Properties and Applications of ZnO Single Nanowire Based Schottky Diode

Cited by 4 publications

References 39 publications

High Performance Vertical Resonant Photo-Effect-Transistor with an All-Around OLED-Gate for Ultra-Electromagnetic Stability

High Performance Vertical Resonant Photo-Effect-Transistor with an All-Around OLED-Gate for Ultra-Electromagnetic Stability

Laser modification of Au–CuO–Au structures for improved electrical and electro-optical properties

Electrolyte‐Gated Vertical Transistor Charge Transport Enables Photo‐Switching

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