2021
DOI: 10.1007/s43236-021-00275-z
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Junction temperature measurement method for IGBTs using turn-on miller plateau duration

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Cited by 3 publications
(2 citation statements)
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“…Mathematical thermal modeling of MMC is divided into two steps: 1) power loss calculation and 2) thermal estimation of the power devices. The energy loss Esw [20] by the switching of the power devices is shown in equation (15).…”
Section: ) B Mathematical Thermal Modelingmentioning
confidence: 99%
See 1 more Smart Citation
“…Mathematical thermal modeling of MMC is divided into two steps: 1) power loss calculation and 2) thermal estimation of the power devices. The energy loss Esw [20] by the switching of the power devices is shown in equation (15).…”
Section: ) B Mathematical Thermal Modelingmentioning
confidence: 99%
“…The power semiconductor switches are the main components of power conversion systems [11]. The semiconductor device failure accounts for 21 % of converter system failure, and the leading cause of the switches is thermal stress [12][13][14] As a result, the thermal state of the semiconductor determines the reliability and robustness of the systems [15]. The thermal stresses of the semiconductor occur in bond wire fatigue, metallization reconstruction, solder fatigue, gate oxide failure, and burnout failure [16].…”
Section: Introductionmentioning
confidence: 99%