Junction Temperature Prediction Model for GaAs HBT Devices Based on ASO-ELM

Abstract

In this study, an accurate temperature prediction model is proposed for GaAs HBT, which considers both the bias voltage and current rather than power consumption only. The increase in temperature is closely related to the heat source property, which leads to a complex interaction between the lattice vibration and the uneven distribution of the electric field and current density. To improve the accuracy and stability of the temperature prediction model, a machine learning method of Extreme Learning Machine (ELM) optimized with an Atomic Search Algorithm (ASO) is introduced. The validity of the model is verified by comparing it with experimental observations by the QFI InfraScope TM temperature mapping system. The predicted temperatures for an 8 × 8 HBT power cell fabricated with 2 μm GaAs technology show good agreement with the measurement results, with a ±2 °C error and a relative error deviation below 3%. This demonstrates the superior performance of the proposed model in accurately predicting the temperature of GaAs HBT.

Modeling and Direct Extraction of Parameters for GaAs HBT Small- Signal Equivalent Circuit

“…Subsequently, the parameters require adjustment through comparison with the measured gain curve. Combined with the analysis of the influence of parameters in 3.2 on circuit gain and the extraction of modeling parameter values and units of HBT tube and GaAs HBT tube in reference [7][8][9][10], the simulation gain curve is obtained after multiple fitting, as shown in Fig. 10.…”

“…GaAs HBT offers advantages such as high cutoff frequency, substantial current gain, and minimal noise. Leveraging these benefits, low-noise amplifiers employing GaAs HBT as the amplification unit find extensive use in aerospace, electronic information, and other fields [4][5][6][7][8][9]. Modeling RF devices serves a dual purpose: it enhances the success rate of circuit design and facilitates the analysis of electromagnetic compatibility characteristics within the RF system.…”