Junction-Temperature Sensing of Paralleled SiC MOSFETs Utilizing Temperature Sensitive Optical Parameters

Ruppert, Lukas A.; Kalker, Sven; Doncker, Rik W. De

doi:10.1109/ecce47101.2021.9595734

Cited by 9 publications

(5 citation statements)

References 28 publications

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“…The photodetector generates a current proportional to the emission, depending on the junction temperature of the SiC MOSFET. In addition, the spectrum emitted under different conditions can also be analyzed on a spectrometer for characterization purposes [ 106 ].…”

Section: Methods Of Calibrationmentioning

confidence: 99%

“…The approach in [ 106 ] utilized the TSOP technique for measuring the junction temperature of two paralleled SiC MOSFETs. Here, the extraction of light emission from individual chips was carried out independently.…”

Section: Junction Temperature Optical Sensing Techniquesmentioning

confidence: 99%

“…However, the observed EL emission is weak, since the radiative recombination in SiC is low due to the dominant non-radiative combination. The approach in [106] utilized the TSOP technique for measuring the junction temperature of two paralleled SiC MOSFETs. Here, the extraction of light emission from individual chips was carried out independently.…”

Section: Tsop Sensing Techniquementioning

confidence: 99%

See 2 more Smart Citations

Junction Temperature Optical Sensing Techniques for Power Switching Semiconductors: A Review

Isa,

Mirza,

Ghafoor

et al. 2023

Micromachines

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Recent advancements in power electronic switches provide effective control and operational stability of power grid systems. Junction temperature is a crucial parameter of power-switching semiconductor devices, which needs monitoring to facilitate reliable operation and thermal control of power electronics circuits and ensure reliable performance. Over the years, various junction temperature measurement techniques have been developed, engaging both non-optical and optical-based methods, highlighting their advancements and challenges. This review focuses on several optical sensing-based junction temperature measuring techniques used for power-switching devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs). A comprehensive summary of recent developments in infrared camera (IRC), thermal sensitive optical parameter (TSOP), and fiber Bragg grating (FBG) temperature sensing techniques is provided, shedding light on their merits and challenges while providing a few possible future solutions. In addition, calibration methods and remedies for obtaining accurate measurements are discussed, thus providing better insight and directions for future research.

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Section: Methods Of Calibrationmentioning

confidence: 99%

Section: Junction Temperature Optical Sensing Techniquesmentioning

confidence: 99%

Section: Tsop Sensing Techniquementioning

confidence: 99%

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Junction Temperature Optical Sensing Techniques for Power Switching Semiconductors: A Review

Isa,

Mirza,

Ghafoor

et al. 2023

Micromachines

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“…Lukas et al [86] addressed temperature measurement challenges in parallel semiconductor devices caused by uneven temperature and current distribution due to device variations, leading to inaccurate LED temperature readings. They introduced a TSOP method that utilized the electroluminescence of SiC Mosfet to independently measure the junction temperature of each parallel semiconductor.…”

Section: Temperature Sensitive Optical Parameters (Tsops)mentioning

confidence: 99%

“…Additionally, to overcome electromagnetic interference and challenges in temperature measurement in high-voltage applications, they leveraged the temperature-dependent electroluminescence spectrum of Si IGBT and proposed a TSOP method. This method offered wide temperature and current detection ranges, and provided more sensitive detection at high current and low temperature [87].…”

Section: Temperature Sensitive Optical Parameters (Tsops)mentioning

confidence: 99%

LED Junction Temperature Measurement: From Steady State to Transient State

Zhao,

Gong,

Zhu

et al. 2024

Sensors

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In this review, we meticulously analyze and consolidate various techniques used for measuring the junction temperature of light-emitting diodes (LEDs) by examining recent advancements in the field as reported in the literature. We initiate our exploration by delineating the evolution of LED technology and underscore the criticality of junction temperature detection. Subsequently, we delve into two key facets of LED junction temperature assessment: steady-state and transient measurements. Beginning with an examination of innovations in steady-state junction temperature detection, we cover a spectrum of approaches ranging from traditional one-dimensional methods to more advanced three-dimensional techniques. These include micro-thermocouple, liquid crystal thermography (LCT), temperature sensitive optical parameters (TSOPs), and infrared (IR) thermography methods. We provide a comprehensive summary of the contributions made by researchers in this domain, while also elucidating the merits and demerits of each method. Transitioning to transient detection, we offer a detailed overview of various techniques such as the improved T3ster method, an enhanced one-dimensional continuous rectangular wave method (CRWM), and thermal reflection imaging. Additionally, we introduce novel methods leveraging high-speed camera technology and reflected light intensity (h-SCRLI), as well as micro high-speed transient imaging based on reflected light (μ_HSTI). Finally, we provide a critical appraisal of the advantages and limitations inherent in several transient detection methods and offer prognostications on future developments in this burgeoning field.

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Closed-Loop Current Control of a SiC-Based Power Converter via Galvanically Isolated Electroluminescence Sensing

Zhen,

Corzine,

Porter

et al. 2024

IEEE Access

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Junction-Temperature Sensing of Paralleled SiC MOSFETs Utilizing Temperature Sensitive Optical Parameters

Cited by 9 publications

References 28 publications

Junction Temperature Optical Sensing Techniques for Power Switching Semiconductors: A Review

Junction Temperature Optical Sensing Techniques for Power Switching Semiconductors: A Review

LED Junction Temperature Measurement: From Steady State to Transient State

Closed-Loop Current Control of a SiC-Based Power Converter via Galvanically Isolated Electroluminescence Sensing

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