Junctionless Electric‐Double‐Layer Thin‐Film Transistors with Logic Functions

Yuan, Xiong; Dou, Wei; Gan, Xiaomin; Hou, Wei; Lei, Liuhui; Zhou, Weichang; Tang, Dongsheng

doi:10.1002/pssr.202200480

Cited by 6 publications

(4 citation statements)

References 29 publications

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“…At 10 Hz, a maximum specific capacitance of 17.3 μF/cm 2 is attained. Chitosan with water addition showed significantly higher ionic conductivity (10 −5 S·cm −1 ) compared to dried chitosan (10 −9 S·cm −1 ), which led to the formation of EDL that caused the device to work at low voltage [ 24 , 25 ]. The schematic diagram of the EDL formation is shown in Figure 3 c. Due to the addition of deionized water to the chitosan precursor, a part of the free amino group in the chitosan gate dielectric film is deprotonated, and hydroxide ions are formed (-NH 2 + H 2 O → NH 3+ + OH − ).…”

Section: Resultsmentioning

confidence: 99%

“…At 10 Hz, a maximum specific capacitance of 17.3 µF/cm 2 is attained. Chitosan with water addition showed significantly higher ionic conductivity (10 −5 S•cm −1 ) compared to dried chitosan (10 −9 S•cm −1 ), which led to the formation of EDL that caused the device to work at low voltage [24,25]. The schematic diagram of the EDL formation is shown in Figure 3c.…”

Section: Resultsmentioning

confidence: 99%

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Low-Voltage Solution-Processed Zinc-Doped CuI Thin Film Transistors with NOR Logic and Artificial Synaptic Function

et al. 2023

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Low-voltage Zn-doped CuI thin film transistors (TFTs) gated by chitosan dielectric were fabricated at a low temperature. The Zn-doped CuI TFT exhibited a more superior on/off current ratio than CuI TFT due to the substitution or supplementation of copper vacancies by Zn ions. The Zn-doped CuI films were characterized by scanning electron microscope, X-ray diffraction, and X-ray photoelectron spectroscopy. The Zn-doped CuI TFTs exhibited an on/off current ratio of 1.58 × 104, a subthreshold swing of 70 mV/decade, and a field effect mobility of 0.40 cm2V−1s−1, demonstrating good operational stability. Due to the electric-double-layer (EDL) effect and high specific capacitance (17.3 μF/cm2) of chitosan gate dielectric, Zn-doped CuI TFT operates at a voltage below −2 V. The threshold voltage is −0.2 V. In particular, we have prepared Zn-doped CuI TFTs with two in-plane gates and NOR logic operation is implemented on such TFTs. In addition, using the ion relaxation effect and EDL effect of chitosan film, a simple pain neuron simulation is realized on such a p-type TFTs for the first time through the bottom gate to regulate the carrier transport of the channel. This p-type device has promising applications in low-cost electronic devices, complementary electronic circuit, and biosensors.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Low-Voltage Solution-Processed Zinc-Doped CuI Thin Film Transistors with NOR Logic and Artificial Synaptic Function

et al. 2023

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“…124 Devices employing chitosan as the gate dielectric enable low-voltage operation, reducing energy consumption. 125 Lee et al introduced a synaptic transistor that employs a mixed electrolyte comprising high-ionic-conductivity PVA and CS biopolymers as the EDL. 126 This study not only reduced the limitations of traditional electronic materials but also emphasized the significance of biocompatibility, laying the groundwork for future bioelectronic devices.…”

Section: Neurosynaptic Devices Based On Three-terminal Transistorsmentioning

confidence: 99%

Recent progress of organic artificial synapses in biomimetic sensory neural systems

Fang,

Mao,

Wang

et al. 2024

J. Mater. Chem. C

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“…Various TFT designs and structures have been extensively explored to ensure greater mechanical stress tolerance while maintaining less deviated electrical properties. − Among these approaches, a junctionless (JL) architecture of the MO TFT can provide another chance not only to overcome the problematic issues but also to suggest a promising solution for process simplicity and cost-effectiveness. − Unlike conventional TFTs, which often require optimization of source/drain materials to enhance carrier injection efficiency and reduce contact resistance, JL TFTs have no additional source/drain electrodes connected to channel junctions, resulting in simplified device structures with minimal fabrication processes. The main operation principle of the JL TFTs is that the active channel region is completely depleted by the difference of work function between the gate material and the active layer when the device is turned OFF, while a high electron concentration is accumulated by the gate bias when the device is turned on.…”

Section: Introductionmentioning

confidence: 99%

Junctionless Structure Indium–Tin Oxide Thin-Film Transistors Enabling Enhanced Mechanical and Contact Stability

Jeon,

Jo,

Nam

et al. 2024

ACS Appl. Mater. Interfaces

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In recent years, considerable attention has focused on high-performance and flexible crystalline metal oxide thin-film transistors (TFTs). However, achieving both high performance and flexibility in semiconductor devices is challenging due to the inherently conductive and brittle nature of crystalline metal oxide. In this study, we propose a facile way to overcome this limitation by employing a junctionless (JL) TFT structure via oxygen plasma treatment of the crystalline indium−tin oxide (ITO) films. The oxygen plasma treatment significantly reduced oxygen vacancies in the ITO films, contributing to the significant reduction in the carrier concentration from 4.67 × 10 20 to 1.39 × 10 16 . Importantly, this reduction was achieved without inducing any noticeable structural changes in the ITO, enabling the successful realization of ITO JL TFTs with an adjustable threshold voltage. Furthermore, the ITO JL TFTs demonstrate good stability and reliability under various bias stress conditions, aging in the air atmosphere, and high-temperature processes. In addition, the ITO JL TFTs exhibit low light sensitivity due to the wide bandgap of ITO and further suppression of Vo defects, making them suitable for applications requiring stable performance under light exposure. To compare and analyze the flexibility of the JL structure and conventional structure with additional source/drain (S/D) junction in ITO TFTs with nonencapsulation, we utilized mechanical simulations and transmission line method (TLM). By employing the JL structure in ITO TFT through carefully optimized oxygen plasma treatment, we successfully mitigated stress concentration at the S/D−channel interface. This resulted in a JL ITO TFT that exhibited a change in contact resistance of less than 20% even after 20,000 bending cycles. Consequently, a stable and flexible ITO TFT with field-effect mobility (μ FE ) of 12.74 cm 2 /(V s) was realized, outperforming conventionally structured ITO TFTs with additional S/D junction, where the contact resistance nearly tripled.

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Junctionless Electric‐Double‐Layer Thin‐Film Transistors with Logic Functions

Cited by 6 publications

References 29 publications

Low-Voltage Solution-Processed Zinc-Doped CuI Thin Film Transistors with NOR Logic and Artificial Synaptic Function

Low-Voltage Solution-Processed Zinc-Doped CuI Thin Film Transistors with NOR Logic and Artificial Synaptic Function

Recent progress of organic artificial synapses in biomimetic sensory neural systems

Junctionless Structure Indium–Tin Oxide Thin-Film Transistors Enabling Enhanced Mechanical and Contact Stability

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