Junctionless Nanowire Transistor (JNT): Properties and design guidelines

Fully CMOS-compatible top-down fabrication of sub-50nm silicon nanowire sensing devices

“…Junctionless transistors operate ideally at doping levels around of 1 × 10 19 cm -3 , although higher levels are usually used [7][8][9]. Such high doping levels however, might have adverse influence on the sensitivity of Si NW sensing devices [4].…”

“…The operation of these devices relies on the principle of a field effect transistor. In contrast to most sensors of this type, however, our devices have a junctionless architecture [7][8][9], i.e. the source, channel (nanowires) and drain have the same dopant polarity (p-type in this case) without any junctions between them.…”

“…Traditional FETs?) since they do not require separate doping of the source and drain regions and possess a number of other advantages over the conventional inversion-mode FETs [7][8][9].…”

Estudo do efeito NBTI em transistores MOS sem junções

“…Este efeito está associado à degradação do dielétrico de porta dos dispositivos ao longo do tempo devido à presença de armadilhas de interface, sendo responsável por uma degradação da corrente (ID) e tensão de limiar (VTH) dos dispositivos. Os transistores JNTs são dopados com o mesmo tipo de dopante no canal, fonte e dreno, fato este que redunda em vantagens como o menor efeito de canal curto e beneficia o maior escalamento em relação a outras estruturas 1 . Os dispositivos JNTs possuem a maior parte da carga fluindo pelo interior do canal, além de apresentarem menor campo elétrico na região de canal.…”

“…This effect is associated to the degradation of the gate dielectric of the devices along the time due to the presence of interface traps and is responsible for the degradation of the drain current and threshold voltage of the transistors. The JNTs are doped with the same type of dopant, for the channel, source and drain, which results in advantages such as the smaller short-channel effect, allowing for a greater miniaturization in relation to other structures 1 . JNTs present most of the charge, flowing through the interior of the channel instead of the interfaces, besides presenting a lower electric field in the channel region.…”