K-Band Digital Power Amplifier Based on InP DHBT

Xu, Xindong; Guo, Runnan; Zhou, Guangchao; Zhang, Bin; Tao, Hongqi

doi:10.1088/1742-6596/2343/1/012013

Cited by 1 publication

(1 citation statement)

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“…InP-based HBTs have been widely used in ultra-high-speed digital-to-analog hybrid circuits [1][2][3] and the mm and sub mm wave circuit designs [4][5][6] mainly due to the superior characteristics of high-frequency gain, high power density, low white noise, good linearity and so on. With the continuous improvement of application requirements, devices are continuously scaling down in size to increase frequency characteristics and meet the corresponding circuit speed.…”

Section: Introductionmentioning

confidence: 99%

Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs

Yan,

Lu,

Cheng

et al. 2023

Micromachines

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In this paper, the reliability of InP/InGaAs DHBTs under high reverse base–collector bias stress is analyzed by experiments and simulation. The DC characteristics and S parameters of the devices under different stress times were measured, and the key parameters with high field stress were also extracted to fully understand and analyze the high-field degradation mechanism of devices. The measurements indicate that the high-field stress leads to an increase in base current, an increase in base–collector (B–C) and base–emitter (B–E) junction leakage current, and a decrease in current gain, and different degrees of degradation of key parameters over stress time. The analysis reveals that the degradation caused by reverse high-field stress mainly occurs in the B–C junction, access resistance degradation, and passivation layer. The physical origins of these failure mechanisms have been studied based on TCAD simulation, and a physical model is proposed to explain the experimental results.

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