2019
DOI: 10.1016/j.elspec.2019.06.009
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k-resolved electronic structure of buried heterostructure and impurity systems by soft-X-ray ARPES

Abstract: Angle-resolved photoelectron spectroscopy (ARPES) is the main experimental tool to explore electronic structure of solids resolved in the electron momentum k . Soft-X-ray ARPES (SX-ARPES), operating in a photon energy range around 1 keV, benefits from enhanced probing depth compared to the conventional VUV-range ARPES, and elemental/chemical state specificity achieved with resonant photoemission. These advantages make SX-ARPES ideally suited for buried heterostructure and impurity systems, which are at the hea… Show more

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Cited by 26 publications
(21 citation statements)
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“…Our k-resolved SX-ARPES experiments -for a recent review of this technique and its spectroscopic advantages see Ref. [31] -used resonant photoexcitation at the Ti L edge that boosted photoemission response of the Ti-derived electron states at the buried interface. The measurements were performed at the SX-ARPES endstation [32] of the Advanced Resonant Spectroscopies (ADRESS) beamline [33] of the Swiss Light Source, Paul Scherrer Institute, Switzerland.…”
Section: Sample Preparation and Sx-arpes Experimentsmentioning
confidence: 99%
“…Our k-resolved SX-ARPES experiments -for a recent review of this technique and its spectroscopic advantages see Ref. [31] -used resonant photoexcitation at the Ti L edge that boosted photoemission response of the Ti-derived electron states at the buried interface. The measurements were performed at the SX-ARPES endstation [32] of the Advanced Resonant Spectroscopies (ADRESS) beamline [33] of the Swiss Light Source, Paul Scherrer Institute, Switzerland.…”
Section: Sample Preparation and Sx-arpes Experimentsmentioning
confidence: 99%
“…An As passivation layer for a GaAs layer hardly induces carrier depletion near the surface of the GaAs layer, and thus band bending is negligible [21]. The SX-ARPES measurements were performed directly through the As capping layer due to the increase of probing depth in the SX region [22]. T C of the (In 0.95 ,Fe 0.05 )As:Be film was estimated to be ∼40 K by the Arrott plot of the magnetic circular dichroism measurements.…”
Section: Methodsmentioning
confidence: 99%
“…In general, the decay of I coh is determined by the relation of the de Broglie wavelength of the photoelectrons λ B = h/p, where p is expressed through their mass m and kinetic energy E k as p = (2mE k ) 1/2 , to the thermal atomic-displacement amplitudes. When upon increase of hv or T these two become comparable, the dipole selection rules relax and the coherent I coh decays 2,27 . This effect is conventionally described within the Debye-Waller (DW) model as I coh ¼ W T ð ÞI coh T¼0 , where W T ð Þ ¼ exp ÀΔK 2 u 2 T ð Þ h i ð Þis the DW-factor with the momentum transfer ΔK / ffiffiffiffiffi ffi hν p and mean-squared atomic displacements 〈u 2 〉, roughly proportional to T. In our data, however, I coh decays with hv much faster compared to the DW-model with any reasonable <u 2 > at our working temperature T~14 K. Even more intriguing, at hv = 205 eV I coh well survives at least up to 105 K ( Fig.…”
Section: Photon-energy-dependent Arpes Responsementioning
confidence: 99%
“…In the context of SC materials, soft-X-ray ARPES (SX-ARPES, for a recent review see ref. 2 ) has previously been used to disentangle bulk from surface states in pnictide superconductors 3 and, more recently, to probe the three-dimensional (3D) electronic structure of overdoped La 2−x Sr x CuO 4 (LSCO) 4,5 and of Bi 2 Sr 2 CuO 6+x…”
Section: Introductionmentioning
confidence: 99%