Ka-band GaN power amplifier MMIC chipset for satellite and 5G cellular communications

Noh, Youn Sub; Choi, Young-Jae; Yom, In‐Bok

doi:10.1109/apcap.2015.7374447

Cited by 20 publications

(8 citation statements)

References 2 publications

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“…S 11 of the resulting drain equivalent circuit is shown as a green trace in Fig. 2 (28)(29)(30)(31)(32)(33)(34)(35)(36)(37)(38). The goal in the following will be to design an ISMN that achieves 85% of the maximum P out and PAE in the frequency band of interest.…”

Section: Technology and Devicementioning

confidence: 99%

Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28–38-GHz GaN Power Amplifier MMIC

Neininger

John

Thome

et al. 2021

IEEE Trans. Microwave Theory Techn.

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In this article, we summarize the theoretical matching boundaries and show the limitations they implicate for real-world amplifier design. Starting with a common schematic prototype, we investigate the question of how to realize its electrical response in a densely routed, massively parallelized layout. To that end, we develop a comprehensive study on the application of space-mapping techniques toward the design of high-power amplifiers (HPAs). We derive three reference design procedures and compare their performance in terms of convergence, speed, and practicality when laying out a densely routed HPA interstage matching network. Subsequently, we demonstrate the usefulness of the study by designing the networks of a compact three-stage eight-way wideband HPA in the Ka-band. The processed monolithic microwave integrated circuit features a 1-dB large-signal bandwidth of more than 11 GHz (a fractional bandwidth of 32.8%) and thus covers most of the Ka-band with an output power exceeding 6 W in 3 dB of gain compression. This demonstrates the highest combination of power and bandwidth to date using a reactively matched topology in the Ka-band.

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Section: Technology and Devicementioning

confidence: 99%

Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28–38-GHz GaN Power Amplifier MMIC

Neininger

John

Thome

et al. 2021

IEEE Trans. Microwave Theory Techn.

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“…Moreover, the maturation of GaN technology and its commercial adoption gives way to striking advancement in the space industry. The advantages which make GaN the main candidate for space include reliability, radiation hardness and high-temperature operation, in addition to the generic advantages of high added efficiency, high power density and high operational frequency [25,26]. The latter three, which also improves the overall efficiency in the RF chain makes GaN technology very suitable for the 5G base station design where MIMO and mmWave technologies will be operational.…”

Section: Gan Technologymentioning

confidence: 99%

Role of satellite communications in 5G ecosystem: perspectives and challenges

Onireti

Imran

2018

Satellite Communications in the 5G Era

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The next generation of mobile radio communication systems-so-called 5G-will provide some major changes to those generations to date. The ability to cope with huge increases in data traffic at reduced latencies and improved quality of user experience together with a major reduction in energy usage are big challenges. In addition, future systems will need to embody connections to billions of objects-the so-called Internet of Things (IoT) which raise new challenges. Visions of 5G are now available from regions across the world and research is ongoing towards new standards. The consensus is a flatter architecture that adds a dense network of small cells operating in the millimetre wave bands and which are adaptable and software controlled. But what is the place for satellites in such a vision? The chapter examines several potential roles for satellites in 5G including coverage extension, IoT, providing resilience, content caching and multicast, and the integrated architecture. Furthermore, the recent advances in satellite communications together with the challenges associated with the use of satellite in the integrated satellite-terrestrial architecture are also discussed.

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“…Multiple-input multiple-output (MIMO) radar, as an emerging system radar, has been drawn much attention in the field of radar, due to its higher advantages than traditional radars in tracking, target localization, parameter estimation and target detection [1,2,3,4,5]. With the continuous breakthrough of key semiconductor technologies, GaN devices with wider band gap, higher electron saturation velocity and higher thermal conductivity are extensively used in the power amplifier (PA) applications of fifth-generation millimeter-wave communication, radar, automotive and other fields [6,7,8]. For low noise applications, GaN-based material are generally considered inferior to gallium arsenide (GaAs) technology on account of the relatively low electron mobility resulting in poorer NF [9,10].…”

Section: Introductionmentioning

confidence: 99%

A K-band MMIC low noise amplifier in GaN-on-Si 100-nm technology for MIMO radar receivers

Yang

Zhang

Liu

et al. 2022

IEICE Electron. Express

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A K-band low noise amplifier (LNA) with low and flat noise figure (NF) is proposed in this letter. The LNA is designed as the first stage of an RF receiver in a frequency modulated continuous wave (FMCW) multiple-in multiple-out (MIMO) radar system for marine vessel monitoring and airspace unmanned aerial vehicle (UAV) monitoring. The multi-antenna structure at the receiving end of the MIMO radar implies higher sensitivity. The LNA is fabricated using a 100-nm GaN high electron mobility transistor (HEMT) process with a chip area of 2.2 mm 2 . By analyzing the noise equivalent circuit model of a GaN-on-Si HEMT and optimizing the matching network, the proposed LNA achieves a measured average gain of 17.2 dB, an NF of 2.0-2.3 dB over the frequency range from 18 to 22.5 GHz. With a power sweep measurement, this LNA achieves an P1dB of 10.5 dBm and an OIP3 of 19 dBm at 20 GHz. The DC consumption is 220 mW under 5 V power supply.

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Ka-band GaN power amplifier MMIC chipset for satellite and 5G cellular communications

Cited by 20 publications

References 2 publications

Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28–38-GHz GaN Power Amplifier MMIC

Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28–38-GHz GaN Power Amplifier MMIC

Role of satellite communications in 5G ecosystem: perspectives and challenges

A K-band MMIC low noise amplifier in GaN-on-Si 100-nm technology for MIMO radar receivers

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