Kelvin probe force microscopy on InAs thin films grown on GaAs giant step structures formed on (110) GaAs vicinal substrates

Ono, Shiano; Takeuchi, Misaichi; Takahashi, Takuji

doi:10.1063/1.1348318

Cited by 29 publications

(19 citation statements)

References 10 publications

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“…It is known that surface potential varies according to the dipole moment of molecules adsorbed on a surface. In the case of a water-related layer on a sample surface, the surface potential of AlGaN/GaN heterostructure and n-GaN is thought to be shielded by the adsorbed water-related layer, which can be easily polarized [21]. Since the surface adsorbed water-related layer could be removed after the thermal treatment, the quantitative and highresolution potential images would be obtained.…”

Section: Resultsmentioning

confidence: 99%

Measurement of surface contact potential of AlGaN/GaN heterostructure and n‐GaN by Kelvin probe force microscopy

Kishimoto

Mizutani

2003

phys. stat. sol. (c)

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The contact potential images of the AlGaN/GaN heterostructure and n-GaN before and after thermal treatment have been successfully obtained by Kelvin probe force microscopy (KFM). It was found that the removal of the surface potential shielding effect of the adsorbed water-related layer by means of thermal treatment was effective in the observation of low potential regions at around the dislocations. The low potential regions at dislocations indicated that the dislocations of AlGaN/GaN heterostructure and n-GaN were negatively charged. The contact potential variations around the dislocations in AlGaN/GaN heterostructure was much larger than that of n-GaN in both magnitude and diameter.

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Section: Resultsmentioning

confidence: 99%

Measurement of surface contact potential of AlGaN/GaN heterostructure and n‐GaN by Kelvin probe force microscopy

Kishimoto

Mizutani

2003

phys. stat. sol. (c)

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“…at the surface the conduction band is below the Fermi level), and an electron accumulation region forms. 33 Accordingly, we varied the pinning potential in the range −0.5 ≤ V pin /E Γ ≤ 0.5 for In 1−x Ga x As, and found a small change in the simulated E THz . In Fig.…”

Section: Surface Space-charge Layermentioning

confidence: 92%

Carrier dynamics in ion-implanted semiconductors studied by simulation and observation of terahertz emission

et al. 2006

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We have experimentally measured the terahertz radiation from a series of ion-implanted semiconductors, both from the bare semiconductor surface and from photoconductive switches fabricated on them. GaAs was implanted with As + ions, and InGaAs and InP with Fe + ions, and all samples were annealed post implantation. An increase in emission power is observed at high frequencies, which we attribute to the ultrafast trapping of carriers. We use a three-dimensional carrier dynamics simulation to model the emission process. The simulation accurately predicts the experimentally observed bandwidth increase, without resorting to any fitting parameters. Additionally, we discuss intervalley scattering, the influence of space-charge fields, and the relative performance of InP, GaAs and InAs based photoconductive emitters.

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“…Also, the removal of the water-related layer from both surfaces of the sample and the AFM tip was reported to be very important to improve the reliability of the KPFM measurements [47]. Moreover, it was reported that larger humidity levels and a thicker adsorbed water film over the sample surface result in a larger adhesive force between the AFM tip and the sample [36].…”

Section: Fdc-based Characterizationmentioning

confidence: 99%

Effect of Deposition Gas Ratio, RF Power, and Substrate Temperature on the Charging/Discharging Processes in PECVD Silicon Nitride Films for Electrostatic NEMS/MEMS Reliability Using Atomic Force Microscopy

Zaghloul

Papaioannou

Bhushan

et al. 2011

J. Microelectromech. Syst.

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The dependence of the electrical properties of silicon nitride, which is a commonly used dielectric in nanoand micro-electromechanical systems (NEMS and MEMS), on the deposition conditions used to prepare it and, consequently, on material stoichiometry has not been fully understood. In this paper, the influence of plasma-enhanced chemical vapor deposition conditions on the dielectric charging of SiN x films is investigated. The work targets mainly the dielectriccharging phenomenon which constitutes a major failure mechanism in electrostatically driven NEMS/MEMS devices and particularly in capacitive MEMS switches. The charging/ discharging processes are studied using two nanoscale characterization techniques: Kelvin probe force microscopy (KPFM) and, for the first time, force-distance curve (FDC) measurements. KPFM is used to investigate dielectric charging at the level of a single asperity, while FDC is employed to measure the multiphysics coupling between the charging phenomenon and tribological issues, mainly meniscus force. The electrical properties of the SiN x films obtained from both techniques show a very good correlation. X-ray photoelectron spectroscopy and Fourier transform infrared Manuscript

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Kelvin probe force microscopy on InAs thin films grown on GaAs giant step structures formed on (110) GaAs vicinal substrates

Cited by 29 publications

References 10 publications

Measurement of surface contact potential of AlGaN/GaN heterostructure and n‐GaN by Kelvin probe force microscopy

Measurement of surface contact potential of AlGaN/GaN heterostructure and n‐GaN by Kelvin probe force microscopy

Carrier dynamics in ion-implanted semiconductors studied by simulation and observation of terahertz emission

Effect of Deposition Gas Ratio, RF Power, and Substrate Temperature on the Charging/Discharging Processes in PECVD Silicon Nitride Films for Electrostatic NEMS/MEMS Reliability Using Atomic Force Microscopy

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