Kelvin probe measurements of microcrystalline silicon on a nanometer scale using SFM

Abstract

Abstract:Work function measurements on cross sectioned microcrystalline pin silicon solar cells deposited by Hot−Wire CVD are presented. The experiment is realized by combining a modified Kelvin probe experiment and a scanning force microscope. The measured surface potential revealed that the built−in electric drift field is weak in the middle of the compensated intrinsic layer. A graded donor distribution and a constant boron compensation have to be assumed within the intrinsic layer in order to obtain coincidence of the measurements and simulations. The microcrystalline p−silicon layer and the n−type transparent conducting oxide form a reverse polarized diode in series with the pin diode.

On the application of the vibrating Kelvin probe method for quality control of Cu(In,Ga)(Se,S)2 thin‐film solar modules

“…In the field of solar cells, KPFM is often used to determine the potential distribution in the cross section solar cell samples . The technique was applied to determine potential profile in a wide variety of solar cells: CIGS , crystalline silicon , microcrystalline silicon , organic bulk heterojunction and III‐V compound cells . KPFM and surface photovoltage techniques have been also used for the investigation of grain boundaries in multicrystalline silicon materials .…”

Visualization and analysis of active dopant distribution in a p-i-n structured amorphous silicon solar cell using scanning nonlinear dielectric microscopy

“…Although there are several studies which evaluated various types of solar cells, few reports attempted to visualize the dopant distribution in a-Si solar cell. [4][5][6][7] This is probably because the a-Si layer is so thin that such measurements are difficult. Therefore, an evaluation technique with a high spatial resolution is needed to precisely evaluate the a-Si layer.…”

Scanning Kelvin probe measurements on As-doped CdTe solar cells

“…High-resolution (<50 nm) surface topography imaging and contact potential difference (CPD) measurement were simultaneously demonstrated where CPD = 1 -2 with 1 and 2 the work functions respectively of the probe tip and the material under investigation. SKPM 3 Author to whom any correspondence should be addressed. has since been used to investigate a variety of PV and non-PV materials including single crystal Si [2], microcrystalline Si [3], GaN [4], CuGaSe 2 [5] and p-CdTe [6].…”

“…SKPM 3 Author to whom any correspondence should be addressed. has since been used to investigate a variety of PV and non-PV materials including single crystal Si [2], microcrystalline Si [3], GaN [4], CuGaSe 2 [5] and p-CdTe [6].…”