Key Process steps for high reliable SiOCH low-k dielectrics for the sub 45nm technology nodes

Vilmay, M.; Roy, D.; Besset, C.; Galpin, D.; Monget, C.; Vannier, P.; Friec, Y. Le; Imbert, G.; Mellier, M.; Petitdidier, S.; Robin, Olivier; Guillan, J.; Chhun, S.; Arnaud, L.; Volpi, F.; Chaix, Jean‐Marc

doi:10.1109/iitc.2009.5090359

Cited by 3 publications

(2 citation statements)

References 4 publications

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“…However, the low-k materials are characterized by poor mechanical, thermal, and electrical properties in comparison with silicon dioxide, [2]. Some of the process steps such as chemical mechanical planarization (CMP) and plasma etch can potentially damage the dielectric sub-surfaces regions, generating charge carrier traps and assisting the conduction, [3]. As a result, the IC chips integrated with the copper/low-k interconnects tend to be vulnerable to TDDB failure.…”

Section: Introductionmentioning

confidence: 99%

Physics-based full-chip TDDB assessment for BEOL interconnects

Huang

Sukharev

et al. 2016

Proceedings of the 53rd Annual Design Automation Conference

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As technology advances, Time-Dependent Dielectric Breakdown (TDDB) has become one of the major reliability threats for Copper/low-k interconnects. This article presents a novel approach, techniques, and flow for the physics-based chipscale assessment of backend low-k TDDB. In our work, the breakdown development is considered as the complementary combination of electric current path generation by means of diffusing metal ions and field-based hoping conductivity of the current carriers. It replaces the widely accepted acrosslayout electrostatic field based TDDB assessment. As a result, the model generated time-to-failure (TTF) is governed by kinetics of the electric current path generation, which is controlled by a time-dependent minimum metal ion concentration in the inter-metal dielectrics (IMD) gap-fill. Finite element analysis (FEA)-based simulations are used for populating the set of lookup tables, which provide a time to breakdown for any interconnect pattern with given geometries and voltages. A pattern-matching technique is used for extracting from the layout all patterns belonging to different classes of pattern shapes with different geometries, locations and electric loads. Experimental results obtained on a test chip show that upon the calibration the proposed flow provides a capability to evaluate chip-scale low-k TDDB reliability based on the calculated TTF and detect most leaking shapes in the layout.

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Section: Introductionmentioning

confidence: 99%

Physics-based full-chip TDDB assessment for BEOL interconnects

Huang

Sukharev

et al. 2016

Proceedings of the 53rd Annual Design Automation Conference

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“…However, it has been reported that this has some risks such as the degradation of dielectric breakdown characteristics and time-dependent dielectric breakdown (TDDB) reliability. [10][11][12][13] In this paper, we demonstrate the effects of Cu interconnect integration using direct CMP process on porous low-k film. Reliability was improved by using a porous lowk film with higher resistance against CMP damage in addition to setting soft CMP conditions to reduce the damage.…”

Section: Introductionmentioning

confidence: 99%

Cu Dual-Damascene Interconnects with Direct Chemical Mechanical Polishing Process on Porous Low-k Film

Izumitani¹,

Kodama²,

Kido³

et al. 2010

Jpn. J. Appl. Phys.

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A hydrogel-based functional hybrid with highly uniformly dispersed nanoparticulate CdS semiconductors is proposed. The hybrid is synthesized using an in situ polymerization following an in situ chemical reduction, where the resulting particle size and the distribution of CdS nanocrystals (NCs) can be narrowly manipulated. The hybrids, containing a relatively small amount of the CdS NCs, exhibit a pronounced photoluminescence spectrum shift when in contact with a number of dielectric liquids and such a pronounced dielectric-confinement effect has been experimentally verified and modeled in this study. The sensing capability of the hybrids with respect to dielectric liquids or molecules can be optically characterized and varied depending upon the intensity of the dielectric environment surrounding the hybrids. This work suggests that the transparent, nanoporous CdS-pHEMA hybrids can be used as highly efficient optical sensing materials.

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