KF Addition to Cu&lt;sub&gt;2&lt;/sub&gt;SnS&lt;sub&gt;3&lt;/sub&gt; Thin Films Prepared by Sulfurization Process

Nakashima, Mitsuki; Hirano, Shun; Yamaguchi, Toshiyuki; Araki, Hideki; Katagiri, Hironori; Sasano, Junji; Izaki, Masanobu

doi:10.7567/ssdm.2016.ps-10-15-10l

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“…The curve gradually decreases at longer wavelengths, suggesting a shorter carrier diffusion length and lower collection efficiency in the bulk of the CTS absorber. 7,49 The major loss of EQE between 600 and 1300 nm is a result of the insufficient generation and poor collection of carriers at the back side, revealing a large potential for further improvements in J sc and efficiency by achieving a homogeneously well-developed microstructure throughout the CTS absorber's thickness. 7,46,49 The band gap of the absorber layer was estimated from the EQE and found to be 1.06 eV.…”

Section: Chemistry Of Materialsmentioning

confidence: 99%

“…7,49 The major loss of EQE between 600 and 1300 nm is a result of the insufficient generation and poor collection of carriers at the back side, revealing a large potential for further improvements in J sc and efficiency by achieving a homogeneously well-developed microstructure throughout the CTS absorber's thickness. 7,46,49 The band gap of the absorber layer was estimated from the EQE and found to be 1.06 eV. In addition, the low V oc (V oc deficit) value of 0.327 V in the high-efficiency CTS absorber was strongly related to the high carrier recombination in the p−n junction resulting from the high defect density, which can be indirectly calculated by (E g /q) − V oc .…”

Section: Chemistry Of Materialsmentioning

confidence: 99%

“…6 Pure CTS-based TFSCs with a maximum conversion efficiency of 4.63% have been produced by annealing a coevaporation-deposited stacked precursor with a stacking order of NaF/Cu/Sn under an Sn-and S-containing vapor atmosphere. 7 Although evaporation-based CTS TFSCs exhibit the best performance, their synthesis process limits their commercial use in the emerging CTS-based technologies because of the lack of large area uniformity and the requirement of additional solid Sn powder during the annealing process. In particular, it is quite difficult to precisely control the Sn vapor pressure during the annealing process because of the instability of Sn (IV).…”

Section: ■ Introductionmentioning

confidence: 99%

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Colloidal Wurtzite Cu₂SnS₃ (CTS) Nanocrystals and Their Applications in Solar Cells

et al. 2016

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In the development of low-cost, efficient, and environmentally friendly thin-film solar cells (TFSCs), the search continues for a suitable inorganic colloidal nanocrystal (NC) ink that can be easily used in scalable coating/printing processes. In this work, we first report on the colloidal synthesis of pure wurtzite (WZ) Cu2SnS3 (CTS) NCs using a polyol-mediated hot injection route, which is a nontoxic synthesis method. The synthesized material exhibits a random distribution of CTS nanoflakes with an average lateral dimension of ∼94 ± 15 nm. We also demonstrate that CTS NC ink can be used to fabricate low-cost and environmentally friendly TFSCs through an ethanol-based ink process. The annealing of as-deposited CTS films was performed under different S vapor pressures in a graphite box (volume; 12.3 cm3), at 580 °C for 10 min using a rapid thermal annealing (RTA) process. A comparative study on the performances of the solar cells with CTS absorber layers annealed under different S vapor pressures was conducted. The device derived from the CTS absorber annealed at 350 Torr of S vapor pressure showed the best conversion efficiency 2.77%, which is the first notable efficiency for an CTS NCs ink-based TFSC. In addition, CTS TFSC’s performance degraded only slightly after 50 days in air atmosphere and under damp heating at 90 °C for 50 h, indicating their good stability. These results confirm that WZ CTS NCs may be very attractive and interesting light-absorbing materials for fabricating efficient solar-harvesting devices.

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Section: Chemistry Of Materialsmentioning

confidence: 99%

Section: Chemistry Of Materialsmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

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Colloidal Wurtzite Cu₂SnS₃ (CTS) Nanocrystals and Their Applications in Solar Cells

et al. 2016

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KF Addition to Cu<sub>2</sub>SnS<sub>3</sub> Thin Films Prepared by Sulfurization Process

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Colloidal Wurtzite Cu₂SnS₃ (CTS) Nanocrystals and Their Applications in Solar Cells

Colloidal Wurtzite Cu₂SnS₃ (CTS) Nanocrystals and Their Applications in Solar Cells

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KF Addition to Cu<sub>2</sub>SnS<sub>3</sub> Thin Films Prepared by Sulfurization Process

Cited by 1 publication

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Colloidal Wurtzite Cu2SnS3 (CTS) Nanocrystals and Their Applications in Solar Cells

Colloidal Wurtzite Cu2SnS3 (CTS) Nanocrystals and Their Applications in Solar Cells

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Colloidal Wurtzite Cu₂SnS₃ (CTS) Nanocrystals and Their Applications in Solar Cells

Colloidal Wurtzite Cu₂SnS₃ (CTS) Nanocrystals and Their Applications in Solar Cells