Abstract:A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing. V C 2013 AIP Publishing LLC. [http://… Show more
“…The main factor of the EG-AlGaN/GaN HEMT which may enhance the device performance in this situation, we suppose, is the sensing area. This is because it was reported that more surface receptors lead to a better electrical parameter of sensitivity, 24,25 and a larger sensing area has more receptors. In order to elucidate the relationship between the sensing area of the EG-AlGaN/GaN HEMT and its electrical characteristics, three different areas of the sensing pads were designed and modied (400 mm  400 mm, 500 mm  500 mm and 700 mm  700 mm).…”
“…The main factor of the EG-AlGaN/GaN HEMT which may enhance the device performance in this situation, we suppose, is the sensing area. This is because it was reported that more surface receptors lead to a better electrical parameter of sensitivity, 24,25 and a larger sensing area has more receptors. In order to elucidate the relationship between the sensing area of the EG-AlGaN/GaN HEMT and its electrical characteristics, three different areas of the sensing pads were designed and modied (400 mm  400 mm, 500 mm  500 mm and 700 mm  700 mm).…”
“…25 In a previous work, AuNPs were physically absorbed on the transistor surfaces for kinase detection. 26 The solution of AuNPs were spotted onto the wafer directly and dried in a vacuum desiccator. It was easy to cause aggregation and exfoliation from the surface.…”
In this work, we developed a gold nanoparticle functionalized AlGaN/GaN HEMT sensor for fast and ultrasensitive detection of TNT. This HEMT sensor showed attractive properties for TNT detection in terms of speed, sensitivity and miniaturization.
Herein, density functional theory (DFT) calculations are carried out to investigate the hydrogen gas adsorption on the Pd(Pt)‐decorated GaN (0001) surface. It is found that the diffusion barrier of Pd (Pt) on the GaN (0001) surface is 0.3996 (0.602) eV. Hydrogen molecule adsorbed on the Pt‐decorated GaN (0001) surface can dissociate into hydrogen atoms. The comparison of the density of states and Mulliken charge analysis of the hydrogen molecule adsorption on the Pd(Pt)‐decorated GaN (0001) surface are analyzed in detail. The Pt‐decorated GaN (0001) surface is found to have a high sensing ability for hydrogen molecules from the theoretical point of view.
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