Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE

Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device application

“…It suggests that the As atoms can easily replace P atoms on the InGaP surface at high temperature when the sample was exposed to the As vapor during the gas-switching period. That is, the In x Ga 1Àx As y P 1Ày intermixing layer was easier to form at higher temperature growth [6][7][8][9][10][11][12]. In this work, the optimized growth temperature of the GaAs cap layer was 575 1C, because the As/P exchange on the surface was well suppressed at this temperature.…”

High-resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties

“…Metalorganic vapor phase epitaxy (MOVPE) is one of the most important methods for the growth of the epitaxial wafers used for fabricating those devices, but it is known that unexpected transition layers are formed at As/P heterointerfaces during MOVPE growth [5][6][7][8][9][10][11][12][13][14][15][16][17][18]. These layers can form an undesired barrier or well in band gap profiles, or can cause a gradual heterointerface, that would result in undesired device properties such as low electron mobility in HEMTs or low current gain in HBTs.…”

“…Low-temperature photoluminescence (PL) has been widely used for determining the transition layers [5][6][7][8][9][10][11][12][13][14]. X-ray diffraction (XRD) [15,16] or X-ray crystal truncation rod (CTR) measurement [17] has been also used for evaluating the interface condition of quantum-well (QW) structure.…”

“…X-ray diffraction (XRD) [15,16] or X-ray crystal truncation rod (CTR) measurement [17] has been also used for evaluating the interface condition of quantum-well (QW) structure. Kinetic ellipsometry measurement studies on the relation between the formation of a transition layer at the As/P heterointerface and the gas-switching sequence of MOVPE has also been reported [12][13][14].…”

The role of the surface adsorption layer during MOVPE growth analyzed by the flow modulation method

“…The requirement for the control of the thickness and the composition of such MQW layers is strict: the thickness control by less than a nanometer and the composition control by less than a percent. Also, the abruptness of the composition at the interface of different layers and the uniformity in a single layer is mandatory [1][2][3]. In the development process of such devices, many aspects of MOVPE crystal growth are still not yet understood.…”