Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars

Bergamaschini, Roberto; Bietti, Sergio; Castellano, A.; Frigeri, C.; Falub, C.V.; Scaccabarozzi, Andrea; Bollani, Monica; Känel, H. von; Miglio, Leo; Sanguinetti, S.

doi:10.1063/1.4972467

Cited by 12 publications

(6 citation statements)

References 49 publications

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“…These simulations closely compare with the experiments of micro‐crystals growth on pillar‐patterned substrates reported in Refs. . Indeed, therein the growth conditions were pushed toward a kinetic regime by exploiting a Low‐Energy Plasma‐Enhanced Chemical Vapour Deposition, allowing for the deposition of several µm of Ge by high growth rates (4–7.5 nm s −1 ) at relatively low temperatures (400–600 °C).…”

Section: Applications To Realistic Structuresmentioning

confidence: 99%

Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling

Albani

Bergamaschini

Salvalaglio

et al. 2019

Physica Status Solidi (b)

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The faceting of a growing crystal is theoretically investigated by a continuum model including the incorporation kinetics of adatoms. This allows us for predictions beyond a simple Wulff analysis which typically refers to faceted morphologies in terms of the equilibrium crystal shape for crystals with an anisotropic surface-energy, or to steady-state kinetic shape when the crystals grow with orientation-dependent velocities. A phase-field approach is implemented in order to account simultaneously for these contributions in two-and three dimensions reproducing realistic kinetic pathways for the morphological evolution of crystal surfaces during growth. After a systematic characterization of the faceting determined by orientation-dependent incorporation times, several different crystal morphologies are found by tuning the relative weights of thermodynamic and kinetic driving forces. Applications to realistic systems are finally reported showing the versatility of the proposed approach and demonstrating the key role played by the incorporation dynamics in out-of-equilibrium growth processes.

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Section: Applications To Realistic Structuresmentioning

confidence: 99%

Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling

Albani

Bergamaschini

Salvalaglio

et al. 2019

Physica Status Solidi (b)

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“…Let us now analyze the possibility to grow other materials. In Figure 5, the final morphology of SiC [24] (panel a), GaN [25] (panel b), GaAs [26,27] (panel c), and GaAs/Ge [28,29] (panel d) crystals grown on Si pillars is displayed. The various deposition techniques are listed in the caption.…”

Section: Other Deposition Techniques and Other Materialsmentioning

confidence: 99%

Dislocation-Free SiGe/Si Heterostructures

et al. 2018

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Ge vertical heterostructures grown on deeply-patterned Si(001) were first obtained in 2012 (C.V. Falub et al., Science 2012, 335, 1330-1334, immediately capturing attention due to the appealing possibility of growing micron-sized Ge crystals largely free of thermal stress and hosting dislocations only in a small fraction of their volume. Since then, considerable progress has been made in terms of extending the technique to several other systems, and of developing further strategies to lower the dislocation density. In this review, we shall mainly focus on the latter aspect, discussing in detail 100% dislocation-free, micron-sized vertical heterostructures obtained by exploiting compositional grading in the epitaxial crystals. Furthermore, we shall also analyze the role played by the shape of the pre-patterned substrate in directly influencing the dislocation distribution.

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“…Heteroepitaxial growth could be an effective method for III-V/Si integrated device fabrication, although several issues remain unsolved [4][5][6]. First, the zincblende lower symmetry of GaAs compared to the diamond one of Si (or Ge) returns the formation of antiphase domains (APD).…”

Section: Introductionmentioning

confidence: 99%

Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study

et al. 2020

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We demonstrate the feasibility of growing GaAs nanomembranes on a plastically-relaxed Ge layer deposited on Si (111) by exploiting selective area epitaxy in MBE. Our results are compared to the case of the GaAs homoepitaxy to highlight the criticalities arising by switching to heteroepitaxy. We found that the nanomembranes evolution strongly depends on the chosen growth parameters as well as mask pattern. The selectivity of III-V material with respect to the SiO2 mask can be obtained when the lifetime of Ga adatoms on SiO2 is reduced, so that the diffusion length of adsorbed Ga is high enough to drive the Ga adatoms towards the etched slits. The best condition for a heteroepitaxial selective area epitaxy is obtained using a growth rate equal to 0.3 ML/s of GaAs, with a As BEP pressure of about 2.5 × 10−6 torr and a temperature of 600 °C.

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Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars

Cited by 12 publications

References 49 publications

Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling

Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling

Dislocation-Free SiGe/Si Heterostructures

Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study

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