Kinetic mechanism of the decomposition of dimethyltin dichloride

Morphology control of fluorine-doped tin oxide thin films for enhanced light trapping

“…The microstructures of thin films were determined in part by surface diffusion and nucleation processes on the growth interface. This in turn was affected by the substrate temperature, reactor pressure, and gas-phase composition [26]. In the deposition process different kinds of additives introduced in different amounts changed the reaction chemistry and flow rate, which led to the changes of film formation, growth rate, specific morphology and surface roughness.…”

Enhanced transparent-conducting fluorine-doped tin oxide films formed by Aerosol-Assisted Chemical Vapour Deposition

“…This in turn is affected by the substrate temperature, reactor pressure and gas-phase composition. 18 This paper shows that carrier solvents, far from acting as mere spectators in AACVD, play an extremely important active role in lm growth. Specically, in addition to acting as oxygen source, variation in solvents determine lm microstructure and subsequent improved functional properties.…”

“…In air carrier gas a gas-phase MBTC-H 2 O complex could form, which adsorbs onto the surface and subsequently reacts with gas-phase oxygen to ultimately form SnO 2 . 18,41 Average crystallite sizes of between 5 and 45 nm depending on the system, were calculated using the Scherrer equation. 24 The values indicate a general increase in crystallite size with deposition temperature, as well as lm thickness, whilst there is also a seemingly positive correlation with the TCO gure-of-merit value.…”

Significant roughness enhancement of fluorine-doped tin oxide films with low resistivity and high transparency by using HNO3 addition

“…27 Additives, when they are introduced in different amounts, modify the reaction chemistry and ow rate, which leads to the changes of lm formation, growth rate, surface morphology and roughness. Deposition of FTO thin lms requires the presence of tin, uorine and oxygen sources.…”

“…This in turn is affected by substrate temperature, reactor pressure, and gas-phase composition. 27 Additives, when The addition of HNO 3 might have induced a special nucleation and crystal growth processes, which did not taken place with other additives before. HNO 3 is well known being a strong oxidizing acid, especially at the high temperature of 600 C. In the presence of HCl and/or HF from DMTDC and TFAA, respectively, HNO 3 could have even caused corrosion of the substrate glass used for FTO lm deposition.…”