Kinetic Monte Carlo modeling of the charge transport in a HfO&lt;inf&gt;2&lt;/inf&gt;-based ReRAM with a rough anode

Stehling, Wilhelm; Abbaspour, Elhameh; Jungemann, C.; Menzel, Stephan

doi:10.1109/nvmts.2017.8171310

Cited by 2 publications

(3 citation statements)

References 8 publications

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“…In this paper, a different model for the resistive switching in TiN/Ti/HfO 2 /TiN devices without thermal annealing is presented. Our model is compatible with theoretical findings, similar to switching models presented by other groups and able to explain experimentally obtained data. ,,,− Furthermore, the conditions for filament growth from the anode to the cathode are discussed. 2D and 3D models have different advantages.…”

Section: Introductionsupporting

confidence: 91%

“…This leads to a change in the local stoichiometry and to the formation of a conductive filament. Many other KMC simulations of resistive switching in memristive hafnium oxide have been published so far, using this filament growth model. − A different KMC model, similar to the model of this work, has been presented, assuming oxygen vacancies to be mobile and formed at the HfO 2 /electrode interface. , However, the model is limited to the forming process until now. Theoretical investigations showed a very high energy barrier for the formation of Frenkel defects within the bulk of HfO 2 and that these defects are unstable. , Furthermore, density functional theory (DFT) calculations predict that oxygen vacancies should be mobile in hafnium oxide. , Yalon et al investigated the growth direction in memristive hafnium oxide devices including titanium as a getter material for oxygen.…”

Section: Introductionmentioning

confidence: 99%

“…28−31 A different KMC model, similar to the model of this work, has been presented, assuming oxygen vacancies to be mobile and formed at the HfO 2 /electrode interface. 32,33 However, the model is limited to the forming process until now. Theoretical investigations showed a very high energy barrier for the formation of Frenkel defects within the bulk of HfO 2 and that these defects are unstable.…”

Section: ■ Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Filament Growth and Resistive Switching in Hafnium Oxide Memristive Devices

Dirkmann

Kaiser

Wenger

et al. 2018

ACS Appl. Mater. Interfaces

129

124

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We report on the resistive switching in TiN/Ti/HfO/TiN memristive devices. A resistive switching model for the device is proposed, taking into account important experimental and theoretical findings. The proposed switching model is validated using 2D and 3D kinetic Monte Carlo simulation models. The models are consistently coupled to the electric field and different current transport mechanisms such as direct tunneling, trap-assisted tunneling, ohmic transport, and transport through a quantum point contact have been considered. We find that the numerical results are in excellent agreement with experimentally obtained data. Important device parameters, which are difficult or impossible to measure in experiments, are calculated. This includes the shape of the conductive filament, width of filament constriction, current density, and temperature distribution. To obtain insights in the operation of the device, consecutive cycles have been simulated. Furthermore, the switching kinetics for the forming and set process for different applied voltages is investigated. Finally, the influence of an annealing process on the filament growth, especially on the filament growth direction, is discussed.

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Section: Introductionsupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Filament Growth and Resistive Switching in Hafnium Oxide Memristive Devices

Dirkmann

Kaiser

Wenger

et al. 2018

ACS Appl. Mater. Interfaces

129

124

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Cryptography with Analog Scheme Using Memristors

Cambou

Hély

Assiri

2020

J. Emerg. Technol. Comput. Syst.

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Networks of low-power Internet of Things do not have always access to enough computing power to support mainstream cryptographic schemes; such schemes also consume computing power that can be exposed to side channel attacks. This article describes a method, that we call “cryptography with analog scheme using memristors,” leveraging the physical properties of memristors, which are active elements suitable for the design of components such as artificial neurons. The proposed devices encrypt messages by segmenting them into blocks of bits, each modulating the injected currents into randomly selected memristor cells, resulting into sets of resistance values turned into cipher texts. Through hash-protected handshakes, identical addresses are independently generated by both communicating devices, to concurrently point at the same set of cells in the arrays, and their images. These block ciphers, for example, 1 KB long, can only be decrypted with the same memristor array driven by analog circuitry or its image, rather than digital key-based schemes. The proposed methods generate cipher text, and decrypt them, with approximately one femto joule per bit, which is below observable level through differential power analysis. The article explains how the use of different cells for each message to encrypt, driven under different conditions, has the potential to mitigate mainstream attacks. It provides a detailed characterization of memristors to evaluate the feasibility of the approach and discusses some hardware and architectures to implement the scheme.

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Kinetic Monte Carlo modeling of the charge transport in a HfO<inf>2</inf>-based ReRAM with a rough anode

Cited by 2 publications

References 8 publications

Filament Growth and Resistive Switching in Hafnium Oxide Memristive Devices

Filament Growth and Resistive Switching in Hafnium Oxide Memristive Devices

Cryptography with Analog Scheme Using Memristors

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