Kinetic Monte-Carlo simulations of germanium epitaxial growth on silicon

Abstract

We present Kinetic Lattice Monte Carlo (KLMC) simulations of Ge deposition onto a reconstructed Si (100) surface. In addition to the anisotropy brought on by surface reconstruction, we take into account the role of the exchange of Ge with Si atoms in the substrate and how it effects the interface between the materials. One method of controlling the resulting structures from the growth process is to use a pre-patterned substrate. We present results where the initial structure is a grid pattern. The KLMC simulations in this case yield Ge-Si stripes, that result largely from the anisotropy generated from the surface reconstruction.

Formation of Nanotwin Networks during High-Temperature Crystallization of Amorphous Germanium

“…Figs 2 and 4 ), and [100] and [110] (high mobility). These are qualitatively similar to other simulations of the SPER process using atomistic methods 34 35 36 . The three surface orientations simulated here are schematically shown in Fig.…”

“…These are qualitatively similar to other simulations of the SPER process using atomistic methods. [35][36][37] The three surface orientations simulated here are schematically shown in Figure 8 relative to a [1 10] view of the Ge diamond cubic lattice. In the diamond crystal the four carbon atoms are at the vertices and center of a tetrahedron.…”