Kinetic of crystallization and electrical conductance of Ge5As38Te57 amorphous chalcogenide alloy

Temperature-dependent electrical transport mechanism in amorphous Ge2Sb2Te5films

“…The activation energy E a is calculated to be in the range of 0.36-0.45 eV (see inset in Fig. 3), which is consistent with the previously reported values for amorphous GST films [11,20] and other chalcogenides, such as Ge-As-Te and Ge-Sn-Se systems [21,22]. With a decrease in temperature, the measured conductance deviates from the thermally activated conductance at a critical temperature T * (T * = 277, 280, 294, 263, 252, and 244 K for d = 10, 20, 40, 60, 80, and 100 nm samples, respectively).…”

Effect of ionic irradiation on the pre-exponential factor of thermally activated crystallization in Co66Si16B12Fe4Mo2 metallic glass

“…Such structural effects usually produce pronounced changes in physical properties of glass including a lowering of the glass transition temperature, a lowering of the optical band gap and an increase of molar volumes [25]. The evidence of phase separation in terms of double exothermic peaks (crystallization peaks) has been reported by various workers [26][27][28][29][30].…”

“…However, double endothermic and exothermic peaks have been observed in chalcogenide as well as metallic glasses by various workers using DSC technique [26][27][28][29][30], which indicates the presence of phase separation in these glasses.…”