Kinetic of growth of chemically deposited ZnS films near room temperature conditions

González-Chan, I. J.; Oliva, A.I.

doi:10.1088/2053-1591/aae604

Cited by 3 publications

(4 citation statements)

References 44 publications

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“…Bhaskar et al [142] determined that the growing rate is controlled predominantly by temperature instead of chemically controlled process given the low E a value of their system (30°C to 80°C). Gonzalez-Panzo et al [143] and González-Chan et al [138] not only determined the E a value in their respective experiments, but also determined the reaction order (δ) of the deposition as a function of the thiourea concentration, based on the modification of the Arrhenius equation,…”

Section: Activation Energy and Order Of The Reactionmentioning

confidence: 99%

“…The growing mechanisms of the films through the CBD technique can be carried out by the ion-by-ion [127] and [128], respectively. ZnO films were grown with a modified CBD version (using air bubbles).…”

Section: Growth Mechanismsmentioning

confidence: 99%

“…Temperature is another important factor used for modifying the thickness value as can be seen in Figure 5. The first plot corresponds to the growth of CuS [127] while the second corresponds to the growth of ZnS [128]. From both works, it was observed that increasing the temperature causes a decrease in the induction time; however, CuS grows slightly faster than ZnS at the same temperature.…”

Section: Kinetics Of Growthmentioning

confidence: 99%

“…[143] and González-Chan et al . [138] not only determined the E a value in their respective experiments, but also determined the reaction order (δ) of the deposition as a function of the thiourea concentration, based on the modification of the Arrhenius equation, where B is a proportionality constant.…”

Section: Kinetics Of Growthmentioning

confidence: 99%

See 3 more Smart Citations

The chemical process for materials deposition in aqueous solution: a review

Arias¹,

González-Chan

Várguez³

et al. 2022

Surface Engineering

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The material deposition in aqueous solution, also known as chemical bath deposition (CBD), is a well-established technique for the fabrication of semiconducting thin films. The success of the CBD technique is mainly based on the relatively easy implementation and operation requirements. The CBD has importantly contributed to the development of sensors, optical devices and solar cells applications. In this review, the origins and current state of the art of the CBD technique, the involved physicochemical processes, the growing mechanisms, and the analytical techniques for the estimation of optimal physicochemical conditions for the film deposition are discussed. Emphasis on authors' experience on CBD of CdS, ZnS, Zn (OH) 2 , and ZnO films are here highlighted, following methodologies for a high control of the deposited materials, such as the species distribution diagrams and the solubility curves.

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Section: Activation Energy and Order Of The Reactionmentioning

confidence: 99%

Section: Growth Mechanismsmentioning

confidence: 99%

Section: Kinetics Of Growthmentioning

confidence: 99%

Section: Kinetics Of Growthmentioning

confidence: 99%

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The chemical process for materials deposition in aqueous solution: a review

Arias¹,

González-Chan

Várguez³

et al. 2022

Surface Engineering

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The Role of Counteranions in Solution Deposition of ZnS Thin Films on GaAs

Zakay,

Rand,

Rashkovskiy

et al. 2024

Inorg. Chem.

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Deposition of ZnO Thin Films by Chemical Bath Technique: Physicochemical Conditions and Characterization

González-Chan

Moguel²,

Oliva³

2019

ECS J. Solid State Sci. Technol.

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Zinc oxide (ZnO) was synthesized by chemical bath deposition (CBD) technique at two temperatures (70°C and 90°C). Chemical analysis was carried out on the Zn-NH3-OH zone growth using the species distribution diagrams and the solubility curves in order to determine the parameters to obtain good quality ZnO films. Results show that ZnO films can be obtained when the pH solution is up than 7. Three different pH zones between 7 and 12 were selected for deposition. ZnCl2, NH4NO3, and KOH were the chemical reagents used for the bath. The morphology of the deposited films shows a strong dependence on the pH range of the solution. When the samples are prepared into the Zn(NH3)42+ complexes zone, nano-flowers structures were obtained; whereas, if they are prepared in the zone where the Zn(OH)n2-n ions dominate, nano-flakes were formed. ZnO films deposited at 90°C present highly oriented hexagonal structure (zincite) and a [Zn]/[O]≈1 stoichiometry. While samples deposited at 70°C show degradation in their properties when the pH of the solution increases. By controlling the growth parameters, deposition of the ZnO films and their physical properties can be regulated for determined applications.

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Kinetic of growth of chemically deposited ZnS films near room temperature conditions

Cited by 3 publications

References 44 publications

The chemical process for materials deposition in aqueous solution: a review

The chemical process for materials deposition in aqueous solution: a review

The Role of Counteranions in Solution Deposition of ZnS Thin Films on GaAs

Deposition of ZnO Thin Films by Chemical Bath Technique: Physicochemical Conditions and Characterization

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