Kinetic path towards the passivation of threading dislocations in GaN by oxygen impurities

Christenson, Sayre G.; Xie, Weiyu; Sun, Yiyang; Zhang, S. B.

doi:10.1103/physrevb.95.121201

Cited by 5 publications

(4 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We postulate therefore that some of the dislocations lose their conductive character when they are about to propagate through Mn enriched GaN. And it could be Mn, owing to its mid-gap position of the 2+/3+ level, which would passivate conductive dislocations in the GaN host, an effect similar to that brought about by interstitial O, as already observed experimentally [51] and accounted numerically [52]. The thickness of (Ga,Mn)N in our test structure is rather a moderate one (30 nm), it therefore remains to be seen whether the increase of the defect tolerance in GaN, due to blanking of the conductive dislocations by Mn doping, could become more effective in thicker or more Mn concentrated (Ga,Mn)N layers.…”

Section: Resultssupporting

confidence: 71%

Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire

Kalbarczyk

Dybko

Gas

et al. 2019

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Schottky barrier height and the ideality factor  are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading dislocation density GaN:Si template. The observed above 10 M resistances already at room temperature are indicative that a nearly conductive-dislocation-free electrical properties are achieved. The analysis of temperature dependence of the forward bias I-V characteristics in the frame of the thermionic emission model yields Ti-(Ga,Mn)N Schottky barrier height to be slightly lower but close in character to other metal/GaN junctions. However, the large magnitudes of the ideality factor  > 1.5 for T  300 K, point to a sizable current blocking in the structure. While it remains to be seen whether it is due to the presence of (Ga,Mn)N barrier or due to other factors which reduce the effective area of the junction, an existence of a substantial serial resistance may hold the key to explain similar observations in other devices of a corresponding structure and technological relevance.

show abstract

Section: Resultssupporting

confidence: 71%

Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire

Kalbarczyk

Dybko

Gas

et al. 2019

Journal of Alloys and Compounds

View full text Add to dashboard Cite

show abstract

“…Thus, we argue that incorporation of Heisenberg’s uncertainty principle takes into account the dispersion behavior manifested by the delta terms in the optical transition rate W ↓ . As we examine the effectiveness of surface passivation in view of Heisenberg’s uncertainty principle, we emphasize that deep-level traps within a direct bandgap can be created by defects in the material lattice structure whereby lattice vibration manifests itself in nonradiative interactions between phonons and defect channels in the material crystal structure. , …”

Section: Introductionmentioning

confidence: 99%

“…As we examine the effectiveness of surface passivation in view of Heisenberg's uncertainty principle, we emphasize that deep-level traps within a direct bandgap can be created by defects in the material lattice structure whereby lattice vibration manifests itself in nonradiative interactions between phonons and defect channels in the material crystal structure. 39,40…”

Section: Introductionmentioning

confidence: 99%

Time–Energy Quantum Uncertainty: Quantifying the Effectiveness of Surface Defect Passivation Protocols for Low-Dimensional Semiconductors

Alfaraj

Alghamdi

Alawein

et al. 2020

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

The degree of enhancement in radiative recombination in ensembles of semiconductor nanowires after chemical treatment is quantied within a derived limit, by correlating the energy released during the photoemission processes of the lightmatter reaction and the eective carrier recombination lifetimes. It is argued that the usage of surface recombination velocity or surface saturation current density as passivation metrics that assess the eectiveness of surface passivation does not provide strict and universal theoretical bounds within which the degree of passivation can be conned. In this context, the model developed in this study provides a broadly applicable surface passivation metric for direct energy bandgap semiconductor materials. This is because of its reliance on the dispersion in energy and lifetime of electronhole recombination emission at room temperature, in lieu of the mere dependence on the ratio of peak emission spectral intensities or temperature-and power-dependent photoluminescence measurements performed prior and subsequent to surface treatment. We show that the proposed quantication method, on the basis of steady-state and transient photoluminescence measurements performed entirely at room temperature, provides information on the eectiveness of surface state passivation through a comparison of the dispersion in carrier lifetimes and photon energy emissions in the nanowire ensemble before and after surface passivation. Our measure of the eectiveness of a surface passivation protocol is in essence the supremum of lower bounds one can derive on the product of ∆t and ∆E.

show abstract

“…Dislocations are curvilinear topological defects in crystalline solids that involve a collective displacement of atoms. In semiconductors, they are usually one of the most common and important defects that determine the mechanical, electrical, and optical properties. − Most compound semiconductors, such as GaAs, GaP, CdTe, etc., have the zinc-blende structure, in which the 60° partial and screw dislocations are the predominant dislocations . They are likely to dissociate into a pair of partial dislocations that are connected by a stacking fault due to the low stacking fault energy (a 30° partial and a 90° partial form a dislocation pair for a 60° dislocation, a dislocation pair of two 30° partials for a screw). − The 30° partial dislocations are considered the most important dislocations, because they are relatively easy to form and dominate the dislocation mobility in zinc-blende materials. − …”

mentioning

confidence: 99%

Hole-Induced Spontaneous Mutual Annihilation of Dislocation Pairs

Chen

et al. 2019

J. Phys. Chem. Lett.

View full text Add to dashboard Cite

Dislocations are always observed during crystal growth, and it is usually desirable to reduce the dislocation density in high-quality crystals. Here, the annihilation process of the 30°Shockley partial dislocation pairs in CdTe is studied by first-principles calculations. We found that the dislocations can glide relatively easily due to the weak local bonding. Our systematic study of the slipping mechanism of the dislocations suggests that the energy barrier for the annihilation process is low. Band structure calculations reveal that the band bending caused by the charge transfer between the two dislocation cores depends on the core−core distance. A simple linear model is proposed to describe the mechanism of formation of the dislocation pair. More importantly, we demonstrate that hole injection can affect the core structure, increase the mobility, and eventually trigger a spontaneous mutual annihilation, which could be employed as a possible facile way to reduce the dislocation density.

show abstract

Kinetic path towards the passivation of threading dislocations in GaN by oxygen impurities

Cited by 5 publications

References 41 publications

Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire

Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire

Time–Energy Quantum Uncertainty: Quantifying the Effectiveness of Surface Defect Passivation Protocols for Low-Dimensional Semiconductors

Hole-Induced Spontaneous Mutual Annihilation of Dislocation Pairs

Contact Info

Product

Resources

About