2007
DOI: 10.1063/1.2718510
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Kinetic self-organization of trenched templates for the fabrication of versatile ferromagnetic nanowires

Abstract: We have self-organized versatile magnetic nanowires, i.e. with variable period and adjustable magnetic anisotropy energy (MAE). First, using the kinetic roughening of W(110) uniaxial templates of trenches were grown on commercial Sapphire wafers. Unlike most templates used for self-organization, those have a variable period, 4-12 nm are demonstrated here. Fe deposition then results in the formation of wires in the trenches. The magnitude of MAE could be engineered up or down by changing the capping-or underlay… Show more

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Cited by 16 publications
(13 citation statements)
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“…1b and c). This conclusion is supported by the quantitative analysis of AES spectra, a supplementary study to [14]. To avoid errors in thickness resulting from fluctuations in deposition rates from one sample to another, all measurements were performed on one single wedged sample as depicted in Fig.…”
Section: Nanowires Preparationmentioning
confidence: 99%
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“…1b and c). This conclusion is supported by the quantitative analysis of AES spectra, a supplementary study to [14]. To avoid errors in thickness resulting from fluctuations in deposition rates from one sample to another, all measurements were performed on one single wedged sample as depicted in Fig.…”
Section: Nanowires Preparationmentioning
confidence: 99%
“…Preparation of a non-magnetic self-organized template, as described in [14,18]. The template consists on arrays of trenches aligned along the [0 0 1] direction of the W(11 0) surface (Fig.…”
Section: Nanowires Preparationmentioning
confidence: 99%
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“…The crystallographic orientation of a metal thin film affects its surface energy and structure. Surface chemical reactions and interface engineering, which are important in applications including optoelectronic devices and catalysis, as well as understanding crystalline growth, are therefore of paramount importance [1][2][3][4][5]. In this respect, iridium layers that are crystallographically oriented, exhibit low stress, yet high density and low surface roughness, find widespread use in various high-end technological applications, such as diffusion barrier material in ferroelectric random access memories, gate electrode in field effect transistors, template layer for diamond hetero-epitaxy, active layers in gas sensors, hydrogen separation membranes or materials for electro-catalyst [6][7][8][9], and even in ultrahigh quality grazing incidence configuration mirror elements of the Advanced X-ray Astrophysics Facility -Imaging (AXAF-I), a space-based X-ray observatory of NASA [10,11].…”
Section: Introductionmentioning
confidence: 99%
“…Figure 3b, the following epitaxial relations are obtained: i) out-of-plane: (111) Ir || (111) MgO , ii) in-plane variant 1:[1][2][3][4][5][6][7][8][9][10] Ir ||[1][2][3][4][5][6][7][8][9][10] MgO (180 and ± 60°) and variant 2:[1][2][3][4][5][6][7][8][9][10] Ir || MgO (0 and ± 120°). The existence of two epitaxial variants comes from the fact that there are two possibilities (related by a 180° rotation) to position the iridium unit-cell on the MgO unit-cell: the iridium triangle points either "upwards", or "downwards", as one may conclude from the schematic inFigure 1b.…”
mentioning
confidence: 99%