Kinetic Stabilization of Highly Reactive Species Bearing Heteroatoms

Okazaki, Renji

doi:10.1002/hc.21195

Cited by 11 publications

(4 citation statements)

References 100 publications

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“…Such substitutes reduce the natural polarity of the Si=C bond through effects on both the positive charge density at silicon,

, and negative charge density,

, at carbon [ 21 , 22 ]. In addition to the reduced polarity, steric protection due to bulky substituents, and aromaticity conjugation may also contribute to the stabilization of

bonding between Si and C [ 20 , 23 , 24 , 25 , 26 , 27 ].…”

Section: The Structure Of 2d Silicon Carbidementioning

confidence: 99%

Two-Dimensional Silicon Carbide: Emerging Direct Band Gap Semiconductor

Chabi

Kadel

2020

Nanomaterials

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As a direct wide bandgap semiconducting material, two-dimensional, 2D, silicon carbide has the potential to bring revolutionary advances into optoelectronic and electronic devices. It can overcome current limitations with silicon, bulk SiC, and gapless graphene. In addition to SiC, which is the most stable form of monolayer silicon carbide, other compositions, i.e., SixCy, are also predicted to be energetically favorable. Depending on the stoichiometry and bonding, monolayer SixCy may behave as a semiconductor, semimetal or topological insulator. With different Si/C ratios, the emerging 2D silicon carbide materials could attain novel electronic, optical, magnetic, mechanical, and chemical properties that go beyond those of graphene, silicene, and already discovered 2D semiconducting materials. This paper summarizes key findings in 2D SiC and provides insight into how changing the arrangement of silicon and carbon atoms in SiC will unlock incredible electronic, magnetic, and optical properties. It also highlights the significance of these properties for electronics, optoelectronics, magnetic, and energy devices. Finally, it will discuss potential synthesis approaches that can be used to grow 2D silicon carbide.

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“…Such substitutes reduce the natural polarity of the Si=C bond through effects on both the positive charge density at silicon,

, and negative charge density,

, at carbon [ 21 , 22 ]. In addition to the reduced polarity, steric protection due to bulky substituents, and aromaticity conjugation may also contribute to the stabilization of

bonding between Si and C [ 20 , 23 , 24 , 25 , 26 , 27 ].…”

Section: The Structure Of 2d Silicon Carbidementioning

confidence: 99%

Two-Dimensional Silicon Carbide: Emerging Direct Band Gap Semiconductor

Chabi

Kadel

2020

Nanomaterials

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“…Specifically, thiobenzaldehyde is more stable than linear aliphatic thioaldehyde, which promotes its generation. Such chemoselectivity toward two types of products was also observed in the reduction of thioamides with amalgams (for proposed pathways and other unsuccessful examples, see the Supporting Information).…”

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confidence: 99%

Catalytic Hydrogenation of Thioesters, Thiocarbamates, and Thioamides

et al. 2020

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Direct hydrogenation of thioesters with H2 provides a facile and waste-free method to access alcohols and thiols. However, no report of this reaction is documented, possibly because of the incompatibility of the generated thiol with typical hydrogenation catalysts. Here, we report an efficient and selective hydrogenation of thioesters. The reaction is catalyzed by an acridine-based ruthenium complex without additives. Various thioesters were fully hydrogenated to the corresponding alcohols and thiols with excellent tolerance for amide, ester, and carboxylic acid groups. Thiocarbamates and thioamides also undergo hydrogenation under similar conditions, substantially extending the application of hydrogenation of organosulfur compounds.

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“…intramolecular coordination, has been considered highly challenging due to the inherently high reactivity of the multiple bonds. However, nowadays, several kinds of compounds that contain multiple bonds between heavier main-group elements are easily accessible, especially when the multiple bond is kinetically stabilized by sterically demanding groups. , Since the isolation of the first stable diphosphene, Mes*PPMes* (Mes* = 2,4,6- t Bu 3 -C 6 H 2 ), a variety of compounds with multiple bonds between heavier group 15 elements have been isolated as stable compounds, and their characteristic properties have been extracted. − Especially a dibismuthene, i.e., a compound with a BiBi π bond, has attracted much attention, as bismuth is the heaviest element among the stable elements in the periodic table . Despite the progress accomplished in the last decades on the chemistry of compounds with multiple bonds between group 15 elements, dibismuthene chemistry is still in its infancy and remains a challenging research area.…”

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confidence: 99%

Inorganic-Salt-Free Reduction in Main-Group Chemistry: Synthesis of a Dibismuthene and a Distibene

et al. 2017

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A dibromobismuthine and a dibromostibine that bear 4-tBu-2,6-[CH(SiMe3)2]2-C6H2 (Tbb) groups were reduced with 2,3,5,6-tetramethyl-1,4-bis(trimethylsilyl)-1,4-diaza-2,5-cyclohexadiene to afford the corresponding stable dibismuthene (TbbBiBiTbb) and the distibene (TbbSbSbTbb), respectively. The only byproducts obtained were easily removable tetramethylpyrazine and bromotrimethylsilane. Importantly, inorganic salts were not generated in this reduction: i.e., this is a unique inorganic-salt-free method for the synthesis of compounds with multiple bonds between heavier main-group elements.

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Kinetic Stabilization of Highly Reactive Species Bearing Heteroatoms

Abstract: Bulky substituents, i.e.,2,4,1,1,3,and 2,4,

Cited by 11 publications

References 100 publications

Two-Dimensional Silicon Carbide: Emerging Direct Band Gap Semiconductor

Two-Dimensional Silicon Carbide: Emerging Direct Band Gap Semiconductor

Catalytic Hydrogenation of Thioesters, Thiocarbamates, and Thioamides

Inorganic-Salt-Free Reduction in Main-Group Chemistry: Synthesis of a Dibismuthene and a Distibene

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