Kinetic study of quasi‐ballistic electron transport in nanoscale semiconductor devices

Abstract

SUMMARYWe studied the effect of the scattering accompanying dispersion in quasi-ballistic transport at room temperature in nanoscale semiconductor devices primarily by using numerical calculations. The electron velocity distribution function based on a simple n + -n-n + structure was directly determined by solving the semiclassical Boltzmann transport equation. We discovered that the velocity distribution function of electrons near the potential barrier obtained from the Boltzmann transport equation differs from the function assuming ballistic transport and always has a negative velocity component due to scattering in the channel region that cannot be ignored. This analysis result means that the scattering effect in the channel region cannot be ignored even for nanoscale elements.

Monte Carlo Study of the Coulomb Interaction in Nanoscale Silicon Devices

“…[1][2][3][4] However, it is now recognized that simply scaled Si MOSFETs do not exhibit any performance improvement in deca-nanometer regimes 5,6) and, thus, scattering in the channel still plays an important role and could be inevitable. [7][8][9] Various scattering processes such as impurity scattering and surface-roughness scattering are proposed to explain such degradation. 10,11) Among others, the Coulomb interaction between the electrons is expected to be of crucial importantance to predict reliable device characteristics.…”