Kinetically Self-Limiting Growth of Ge Islands on Si(001)

Kästner, M.; Voigtländer, Bert

doi:10.1103/physrevlett.82.2745

Cited by 184 publications

(128 citation statements)

References 16 publications

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“…1,4,10,15,28 Our STM data demonstrate these two cluster forms to grow from different types of nuclei which have different structures and symmetries: 15,18 Fig. 1 presents STM images of these nuclei and models of arrangement of their atoms on WL.…”

Section: B Summary Of Main Resultsmentioning

confidence: 99%

On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer

Arapkina

Yuryev

2013

Journal of Applied Physics

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Structural models of growing Ge hut clusters-pyramids and wedges-are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc. monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of WL patches are relaxed when huts nucleate on them.

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Section: B Summary Of Main Resultsmentioning

confidence: 99%

On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer

Arapkina

Yuryev

2013

Journal of Applied Physics

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“…The incorporation of material into the sides of the seed islands may be also slowed down by a kinetic limitation to incorporation of material into the facetted strained islands. 23,24 Growth of the seed islands in normal Ge/Si͑111͒ epitaxy thus proceeds in the Stranski-Krastanov mode where the coalescence occurs at a high coverage and results in rough dislocated Ge layers.…”

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confidence: 99%

Growth mechanisms in Ge/Si(111) heteroepitaxy with and without Bi as a surfactant

et al. 2004

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“…As its size increases, the 3D precursor somehow becomes a small faceted 3D island with a regular geometric shape, such as a pyramid bound by the {105} facets in a Ge/Si(001) system or by the {137} face facets in InAs/GaAs(001). Once the faceted sidewalls are fully formed around the 3D island, classical 2D layerby-layer nucleation and growth occur on these sidewall facets [214][215][216][217][218][219][220][221][222]. As the 3D island increases in size by facet growth, at some critical point, steeper facets successively appear on its sidewalls.…”

Section: Nanocrystal Growthmentioning

confidence: 99%

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

Jin

2015

Front. Phys.

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Currently, the nature of self-assembly of three-dimensional epitaxial islands or quantum dots (QDs) in a lattice-mismatched heteroepitaxial growth system, such as InAs/GaAs(001) and Ge/Si(001) as fabricated by molecular beam epitaxy (MBE), is still puzzling. The purpose of this article is to discuss how the self-assembly of InAs QDs in MBE InAs/GaAs(001) should be properly understood in atomic scale. First, the conventional kinetic theories that have traditionally been used to interpret QD self-assembly in heteroepitaxial growth with a significant lattice mismatch are reviewed briefly by examining the literature of the past two decades. Second, based on their own experimental data, the authors point out that InAs QD self-assembly can proceed in distinctly different kinetic ways depending on the growth conditions and so cannot be framed within a universal kinetic theory, and, furthermore, that the process may be transient, or the time required for a QD to grow to maturity may be significantly short, which is obviously inconsistent with conventional kinetic theories. Third, the authors point out that, in all of these conventional theories, two well-established experimental observations have been overlooked: i) A large number of “floating” indium atoms are present on the growing surface in MBE InAs/GaAs(001); ii) an elastically strained InAs film on the GaAs(001) substrate should be mechanically unstable. These two well-established experimental facts may be highly relevant and should be taken into account in interpreting InAs QD formation. Finally, the authors speculate that the formation of an InAs QD is more likely to be a collective event involving a large number of both indium and arsenic atoms simultaneously or, alternatively, a morphological/structural transformation in which a single atomic InAs sheet is transformed into a three-dimensional InAs island, accompanied by the rehybridization from the sp 2-bonded to sp 3-bonded atomic configuration of both indium and arsenic elements in the heteroepitaxial growth system.

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Kinetically Self-Limiting Growth of Ge Islands on Si(001)

Cited by 184 publications

References 16 publications

On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer

On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer

Growth mechanisms in Ge/Si(111) heteroepitaxy with and without Bi as a surfactant

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

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