Kinetics and mechanism of oxygen adsorption on single crystals of germanium

Green, Mino; Liberman, A. B.

doi:10.1016/0022-3697(62)90193-2

Cited by 60 publications

(5 citation statements)

References 17 publications

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“…For fourpoint attachment the number of holes in a completed monolayer will be even greater than 8%. If surface strain is involved in the configuration of the adsorbed species there may only be certain geometrically favored sites which will accommodate twopoint surface attachment (21,22). This could lead to saturation surface coverages, i.e., t~ --> 1, which corresponds to actual surface coverages which are much below a monolayer, based on a count of platinum surface atoms.…”

Section: Reactiou Kineticsmentioning

confidence: 99%

The Electrochemical Oxidation of Ethylene: An Experimental Study

Green¹,

Weber²,

Dražić³

1964

J. Electrochem. Soc.

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Both steady state and time dependent current-voltage curves of the anodic oxidation of ethylene were studied at the electrode Pt(Pt)I1M NaOH, C2H4 (diss.), conditions for obtaining the Tafel slope, found to be approximately 2RT/F, were established. Ethylene partial pressure had no measurable effect on the steady state current-voltage curve in the Tafel region. The Pt electrode was found to become "passivated" at about 0v (NHE). Time dependent studies showed that the electrode became continuously less active. Experiments were carried out in a closed cell arrangement, where ethylene consumed at the anode and coulombs passed could be measured simultaneously. Within experimental error, one mole of ethylene was found to involve the passage of twelve Faradays, showing that ethylene is totally oxidized. An analysis of the experimental data in terms of single electron transfer steps, limiting surface coverage and Tafel transfer coefficients of ~1/2 leads to the conclusion that the OH-discharge most likely plays the dominant role in the rate determining step.

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Section: Reactiou Kineticsmentioning

confidence: 99%

The Electrochemical Oxidation of Ethylene: An Experimental Study

Green¹,

Weber²,

Dražić³

1964

J. Electrochem. Soc.

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“…Many models for oxygen adsorption on silicon have been proposed. Probably the most favoured model has been the peroxide bridge (figure 5a) proposed initially by Green and Liberman (1962). This model has been accepted by Ibach et a1 (1973) and Rowe et al (1976) as being in best agreement with their data on cleaved silicon surfaces.…”

Section: Work-fiilnctionsmentioning

confidence: 82%

Metal contacts to oxygen-contaminated silicon surfaces

Mottram

Northrop

Reed

et al. 1979

J. Phys. D: Appl. Phys.

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Atomically clean (111) silicon surfaces have been produced in ultra-high vacuum both by cleavage and by heat cleaning. These surfaces were deliberately contaminated with oxygen in a controlled manner. During this contamination the work-function changes were studied using the Kelvin vibrating capacitor technique. Schottky diodes were then made by evaporation of copper or gold on to these surfaces without breaking the vacuum. The barrier heights of these devices have been measured by the I-V , C-V and photoelectric methods. In general, the barrier height obtained from C-V data was greater than that obtained from the other two techniques and this difference was found a decreasing function of oxygen exposure. With copper the devices produced after exposure to oxygen aged, over a period of months, in such a way that the barrier height differences increased. The experimental results have not revealed any simple correlation between the work-function changes caused by oxygen adsorption and the corresponding barrier height changes caused by the presence of oxygen at the interface.

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“…When oxygen atoms are chemisorbed on the material surface, different bond configurations may form under different conditions of temperature and oxygen exposures [20]. Green and Liberman [22] proposed that molecular oxygen can form a bridge between two surface atoms. Batra et al [23] found that adsorption at the bridge site is more stable than the on-top site and the centre site.…”

Section: Chemical Interaction Potential Energymentioning

confidence: 99%

Chemisorption-induced microcantilever deflection: a theoretical model

Zhang

Feng

Huang

et al. 2013

Philosophical Magazine Letters

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Microcantilever-based techniques are often used to measure the changes of surface stress and infinitesimal mass induced by adsorbed atoms/molecules on the cantilever surface. In this paper, an energy method using a valence force model is presented to study the cantilever bending behaviour induced by chemisorption. The surface stress change induced by chemisorption is estimated. The chemisorption of oxygen on Si(100) surface is taken as a representative example. The results are consistent with relevant experimental observations. It is shown that chemisorption-induced deformation behaviour of cantilevers shows a distinct dependence on the bond configurations formed by adsorbed atoms and substrate atoms, as illustrated by the Si(100)-O cluster in this paper. The study is helpful for the optimal design of microcantileverbased measurement techniques.

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Kinetics and mechanism of oxygen adsorption on single crystals of germanium

Cited by 60 publications

References 17 publications

The Electrochemical Oxidation of Ethylene: An Experimental Study

The Electrochemical Oxidation of Ethylene: An Experimental Study

Metal contacts to oxygen-contaminated silicon surfaces

Chemisorption-induced microcantilever deflection: a theoretical model

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